1
Transistor
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
s
Features
q
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
200
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
f
T
C
re
Conditions
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
typ
230
1.3
max
250
Unit
V
V
V
MHz
pF
Marking symbol :
K
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 160
110 ~ 250
Marking Symbol
KB
KC
2
Transistor
2SC2778
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
C
re
-- V
CE
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
12
10
8
6
4
2
Ta=25C
I
B
=100
A
80
A
60
A
40
A
20
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
180
60
120
0
12
10
8
6
4
2
V
CE
=10V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
Ta=25C
V
CB
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
80
60
20
50
70
40
10
30
f=2MHz
Ta=25C
V
CB
=6V
10V
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
0.1
1
10
100
0.3
3
30
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
3
Transistor
2SC2778
C
ob
-- V
CB
b
ie
-- g
ie
b
re
-- g
re
b
fe
-- g
fe
b
oe
-- g
oe
1
3
10
30
100
0
3.2
2.4
0.8
2.0
2.8
1.6
0.4
1.2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
20
16
4
12
8
0
12
10
8
6
4
2
y
ie
=g
ie
+jb
ie
V
CE
=10V
f=0.45MHz
1mA
2mA
4mA
7mA
58
25
10.7
100
I
E
= 0.1mA
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
3.0
0
0.5
1.0
1.5
2.0
2.5
y
re
=g
re
+jb
re
V
CE
=10V
f=0.45MHz
I
E
=7mA
2mA
4mA
1mA
0.4mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
y
fe
=g
fe
+jb
fe
V
CE
=10V
f=0.45MHz
10.7
10.7
10.7
0.45
0.4mA
0.1mA
1mA
2mA
4mA
I
E
=7mA
100
100
100
100
58
25
25
25
58
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
f=0.45MHz
I
E
= 0.1mA
7mA
4mA
2mA
1mA
0.4mA
58
10.7
25
100
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)
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