1
Transistors
Publication date: March 2003
SJC00131BED
2SC3315
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
15
mA
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CB
= 6 V, I
E
= -1 mA
720
mV
Forward current transfer ratio
*
h
FE
V
CB
= 6 V, I
E
= -1 mA
65
260
Transition frequency
f
T
V
CB
= 6 V, I
E
= -1 mA, f = 200 MHz
450
650
MHz
Reverse transfer capacitance
C
re
V
CB
= 6 V, I
E
= -1 mA, f = 10.7 MHz
0.8
1.0
pF
(Common emitter)
Power gain
G
P
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
20
24
dB
Noise figure
NF
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
3.3
5.0
dB
Unit: mm
Electrical Characteristics T
a
= 25C 3C
Rank
C
D
h
FE
65 to 160
100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
2SC3315
2
SJC00131BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
C
re
V
CE
G
P
I
E
0
160
40
120
80
0
500
400
300
200
100
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
12
4
8
2
10
6
0
240
160
120
200
80
40
T
a
= 25C
I
B
= 100 A
80
A
60
A
40
A
20
A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
30
25
20
15
10
5
V
CE
= 6 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
360
300
240
180
120
60
V
CE
= 6 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
1 600
1 200
800
400
6 V
V
CE
= 10 V
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
0
2.5
2.0
1.5
1.0
0.5
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1
1
10
100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
= 1 mA
f
= 10.7 MHz
T
a
= 25C
Collector-emitter voltage V
CE
(V)
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
- 0.1
-1
-10
-100
0
30
25
20
15
10
5
f
= 100 MHz
R
g
= 50
T
a
= 25C
6 V
V
CE
= 10 V
Power gain G
P
(dB)
Emitter current I
E
(mA)
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2002 JUL
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