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Электронный компонент: 2SC3757

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Transistors
1
2SC3757
Silicon NPN epitaxial planer type
For high speed switching
I Features
High-speed switching
Low collector to emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Allowing pair use with 2SA1738
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CES
40
V
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
300
mA
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 2Y
Unit: mm
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
1: Base
JEDEC: TO-236
2: Emitter
EIAJ: SC-59
3: Collector
Mini Type Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 15 V, I
E
= 0
0.1
A
Emitter cutoff current
I
EBO
V
EB
= 4 V, I
C
= 0
0.1
A
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.17
0.25
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA
1.0
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -10 mA, f = 200 MHz
450
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2
6
pF
Turn-on time
t
on
17
ns
Turn-off time
t
off
Refere to the measurement circuit
17
ns
Storage time
t
stg
10
ns
I Electrical Characteristics T
a
= 25C 3C
Note) *: Rank classification
Rank
Q
R
h
FE
60 to 120
90 to 200
Marking symbol
2YQ
2YR
2SC3757
Transistors
2
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
0
160
40
120
80
0
240
200
160
120
80
40
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW)
0
0
1.2
0.2
1.0
0.4
0.8
0.6
120
100
80
60
40
20
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
= 3.0 mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
T
a
= 75C
25
C
-25C
Collector to emitter saturation voltage
V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100
300
1 000
T
a
= -25C
25
C
75
C
Base to emitter saturation voltage
V
BE(sat)
(V)
Collector current I
C
(mA)
0
0.1
0.3
600
500
400
300
200
100
1
3
10
30
100
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
V
CE
= 1 V
Collector current I
C
(mA)
-1
-3
-10 -30 -100 -300 -1 000
0
600
500
400
300
200
100
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25C
0
1
6
5
4
3
2
1
3
10
30
100
Collector output capacitance C
ob
(pF)
Collector to base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25C
f
T
I
E
C
ob
V
CB
Switching time measurement circuit
t
on
, t
off
Test circuit
t
stg
Test circuit
220
3.3 k
0.1
F
3.3 k
50
V
CC
= 3 V
V
OUT
50
V
IN
= 10 V
V
IN
= 10 V
V
DD
= -3 V
V
IN
V
IN
V
OUT
t
on
t
off
V
OUT
10%
10%
90%
90%
910
500
0.1
F
500
90
V
CC
= 10 V
V
OUT
50
V
DD
= 2 V
1 k
A
0
V
IN
t
stg
V
OUT
10%
10%
(Waveform at A)