Transistors
1
Publication date: January 2003
SJC00148BED
2SC3938
Silicon NPN epitaxial planar type
For high-speed switching
Features
Low collector-emitter saturation voltage V
CE(sat)
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 40 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
0.1
A
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA
60
200
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.17
0.25
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA
1
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -10 mA, f = 200 MHz
450
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2
6
pF
(Common base, input open circuited)
Turn-on time
t
on
Refer to the measurement circuit
17
ns
Turn-off time
t
off
17
ns
Storage time
t
stg
10
ns
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (E-B short)
V
CES
40
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
100
mA
Peak collector current
I
CP
300
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 2Y
Rank
Q
R
h
FE
60 to 120
90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
2SC3938
2
SJC00148BED
h
FE
I
C
f
T
I
E
C
ob
V
CB
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
220
0.1
F
50
V
CC
= 3 V
V
OUT
3.3 k
50
V
IN
= 10 V
3.3 k
V
BB
= -3 V
V
IN
V
OUT
t
on
90%
10%
90%
10%
t
off
(Waveform at A)
V
IN
V
OUT
10%
10%
t
stg
910
0.1
F
0.1
F
A
90
V
CC
= 10 V
V
OUT
500
50
V
IN
= 10 V
500
1 k
V
BB
= 2 V
t
on
, t
off
test circuit
t
stg
test circuit
Measurement circuit
P
C
T
a
0
160
40
120
80
140
20
100
60
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
T
a
= 25C
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
= 3.0 mA
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
1
10
100
1 000
0.01
0.1
1
10
100
T
a
= -25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
600
500
400
300
200
100
V
CE
= 1 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
-1
-10
-100
-1000
0
600
500
400
300
200
100
V
CE
= 10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
0
6
5
4
3
2
1
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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