1
Power Transistors
2SC3943
Silicon NPN epitaxial planar type
For video amplifier
s
Features
q
Small transition frequency f
T
q
Small collector output capacitance C
ob
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
110
100
50
3.5
300
150
8
2.0
150
55 to +150
Unit
V
V
V
V
mA
mA
W
C
C
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100
A, I
E
= 0
I
C
= 500
A, R
BE
= 470
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 5V, I
C
= 100mA
I
C
= 150mA, I
B
= 15mA
V
CE
= 10V, I
C
= 10mA, f = 10MHz
V
CE
= 10V, I
C
= 110mA, f = 10MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
min
110
100
50
3.5
20
typ
300
350
3.5
max
10
0.5
Unit
A
V
V
V
V
V
MHz
MHz
pF
2
Power Transistors
2SC3943
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)
0
200
160
40
120
80
0
12
10
8
6
4
2
T
C
=Ta
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
240
200
160
120
80
40
T
C
=25C
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=5.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=5V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
300
100
10
3
30
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
25C
T
C
=100C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
T
C
=100C
25C
25C
V
CE
=5V
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0
600
500
400
300
200
100
V
CB
=10V
f=10MHz
T
C
=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
6
5
4
3
2
1
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.1
0.3
1
3
10
30
100
300
1000
Single pulse
Ta=25C
t=10ms
100ms
I
CP
I
C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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