1
Power Transistors
2SC4533
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s
Features
q
High-speed switching
q
High collector to base voltage V
CBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
500
500
400
7
6
3
1.2
30
2
150
55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.2A, f = 1MHz
I
C
= 1.5A, I
B1
= 0.15A, I
B2
= 0.3A,
V
CC
= 200V
min
400
10
8
typ
10
max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
A
A
V
V
V
MHz
s
s
s
2
Power Transistors
2SC4533
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1)
(3)
(2)
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=2W)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25C
400mA
300mA
200mA
100mA
50mA
I
B
=500mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
25C
25C
T
C
=100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=5
T
C
=25C
25C
125C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE
=5V
25C
T
C
=125C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
100
10
1
0.3
3
30
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(2I
B1
=I
B2
)
V
CC
=200V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
DC
10ms
t=1ms
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SC4533
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
R
th(t)
-- t
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
0.2A (2W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
0
800
200
600
400
700
100
500
300
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
I
C
L
coil
=100
H
I
C
/I
B
=5
(I
B1
=I
B2
)
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
L coil
I
C
I
B1
V
in
t
W
I
B2
Vclamp
V
CC
T.U.T
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