1
Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
High-speed switching: t
f
< 0.2
s
Low Collector to emitter saturation voltage: V
CE(sat)
< 3 V
Wide area of safe operation (ASO)
I Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
1 700
V
Collector to emitter voltage
V
CES
1 700
V
V
CEO
600
V
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
30
A
Collector current
I
C
20
A
Base current
I
B
11
A
Collector power
T
C
= 25C
P
C
70
W
dissipation
T
a
= 25C
3.5
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 1 000 V, I
E
= 0
50
A
V
CB
= 1 700 V, I
E
= 0
1
mA
Emitter cutoff current
I
EBO
V
EB
= 7 V, I
C
= 0
50
A
Forward current transfer ratio
h
FE
V
CE
= 5 V, I
C
= 10 A
6
12
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10 A, I
B
= 2.5 A
3
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 10 A, I
B
= 2.5 A
1.5
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t
stg
I
C
= 10 A, Resistance loaded
3.0
s
Fall time
t
f
I
B1
= 2.5 A, I
B2
= -5.0 A
0.2
s
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E
Marking Symbol: C5591
15.5
0.5
3.0
0.3
(4.0)
2.0
0.2
1.1
0.1
5.45
0.3
0.7
0.1
5
5
5
5
5
10.9
0.5
1
5
2
3
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
0.3
5.5
0.3
(2.0)
26.5
0.5
(23.4)
22.0
0.5
18.6
0.5
(2.0)
3.2
0.1
(4.5)
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