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Электронный компонент: 2SC5597

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Power Transistors
1
2SC5597
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
1 700
V
Collector to emitter voltage
V
CES
1 700
V
V
CEO
600
V
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
30
A
Collector current
I
C
22
A
Base current
I
B
11
A
Collector power
T
C
= 25C
P
C
200
W
dissipation
T
a
= 25C
3.5
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 1 000 V, I
E
= 0
50
A
V
CB
= 1 700 V, I
E
= 0
1
mA
Emitter cutoff current
I
EBO
V
EB
= 7 V, I
C
= 0
50
A
Forward current transfer ratio
h
FE
V
CE
= 5 V, I
C
= 11 A
6
12
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 11 A, I
B
= 2.75 A
3
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 11 A, I
B
= 2.75 A
1.5
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t
stg
I
C
= 11 A, Resistance loaded
3.0
s
Fall time
t
f
I
B1
= 2.75 A, I
B2
= -5.5 A
0.2
s
20.0
0.5
2.0
0.3
3.0
0.3
1.0
0.2
5.45
0.3
10.9
0.5
1
2
3
26.0
0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
0.5
5.0
0.3
3.3
0.2
(1.5)
2.7
0.3
0.6
0.2
(3.0)
(3.0)
(2.0)
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
B
C
E
Marking Symbol: C5597
2SC5597
Power Transistors
2
P
C
T
a
Area of safe operation (ASO)
Area of safe operation,
horizontal operation ASO
250
200
150
100
50
0
0
50
25
75
100
125
150
(1)
(2)
(3)
P
C
= 3.5 W
P
C
= 12 W
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(W
)
(1) T
C
= T
a
(2) With a 100
100 2 mm
3
Al heat sink
(3) Without heat sink
0.001
0.003
0.1
0.03
1
2
5
0.01
0.3
10
1
3
30
100
10 20
50 100 200 500
p
I
CP
I
C
D
C
t
=
100
s
t
= 1 ms
t
= 10 ms
Non repetitive pulse
T
C
= 25C
Collector current I
C
(A
)
Collector to emitter voltage V
CE
(V)
35
30
25
20
15
10
5
0
0
1 000
500
1 500
2 000
Collector current I
C
(A
)
Collector to emitter voltage V
CE
(V)
f
= 64 kHz, T
C
< 90C
Area of safe operation for
the single pulse load curve
due to discharge in the high-
voltage rectifier tube during
horizontal operation
< 1 mA