542
Transistor
2SD0601A
(2SD601A)
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB0709A (2SB709A)
s
Features
q
High foward current transfer ratio h
FE
.
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC59
3:Collector
Mini3-G1 Package
0.40
+0.10
0.05
(0.65)
1.50
+0.25 -0.05
2.8
+0.2 -0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
-0.05
0.16
+0.10
-0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 -0.1
1.1
+0.3 -0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
200
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
f
T
NV
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 2V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
90
typ
0.1
150
110
3.5
max
0.1
100
460
0.3
Unit
A
A
V
V
V
V
MHz
mV
pF
Marking symbol :
Z
*
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
ZQ
ZR
ZS
Note.) The Part number in the Parenthesis shows
conventional part number.
Please read the following notes before using the datasheets
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2001 MAR
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