1
Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
s
Features
q
High collector to emitter voltage V
CEO
q
Large collector power dissipation P
C
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
200
150
180
6
3
2
30
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SB940
2SB940A
2SB940
2SB940A
T
C
=25
C
Ta=25
C
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50
A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
min
200
150
180
6
60
50
typ
30
max
50
50
240
1
1
Unit
A
A
V
V
V
V
V
MHz
2SB940
2SB940A
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SB940, 2SB940A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
600
500
400
300
200
100
T
C
=25C
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=4.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
1.0
0.8
0.2
0.6
0.4
0
2.0
1.6
1.2
0.8
0.4
T
C
=100C
25C
25C
V
CE
=10V
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
t=0.5ms
5ms
1ms
I
CP
I
C
2SB940A
2SB940
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 100
100
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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