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Электронный компонент: 2SD1273

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1
Power Transistors
2SB1299
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1273
s
Features
q
High foward current transfer ratio h
FE
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
60
60
6
6
3
1
40
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CB
= 60V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
300
typ
30
max
100
100
100
700
1
Unit
A
A
A
V
V
MHz
T
C
=25
C
Ta=25
C
*
h
FE
Rank classification
Rank
Q
P
h
FE
300 to 500
400 to 700
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SB1299
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
80mA
60mA
40mA
20mA
10mA
5mA
2mA
I
B
=100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
=4V
25C
25C
T
C
=125C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10000
1000
100
30
300
3000
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE
=12V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=40
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
10
1
0.1
0.03
0.3
3
Non
repetitive
pulse
T
C
=25C
t=1ms
I
CP
I
C
10ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SB1299
R
th(t)
-- t
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
(1)
(2)
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
0.2A (2W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(C/W
)