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Электронный компонент: 2SD1280

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1
Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
s
Features
q
Large collector power dissipation P
C
.
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
0.1
2.6
0.1
2.5
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
0.15
1.5
0.1
0.4
0.08
0.5
0.08
1.5
0.1
0.4
0.04
1.6
0.2
45
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
20
20
5
2
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1.5A
*2
I
C
= 1A, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
min
20
5
130
50
typ
200
40
max
1
280
0.5
1.2
Unit
A
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 210
180 ~ 280
Marking Symbol
HR
HS
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
H
*2
Pulse measurement
2
Transistor
2SB956
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
6
5
4
1
3
2
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=5.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=20
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
10
30
100
300
1000
0
500
400
300
200
100
450
350
250
150
50
V
CB
=6V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
120
100
80
60
40
20
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)