ChipFind - документация

Электронный компонент: 2SD1302

Скачать:  PDF   ZIP
Transistors
1
Publication date: January 2003
SJC00215BED
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
Features
Low collector-emitter saturation voltage V
CE(sat)
Low ON resistance R
on
High forward current transfer ratio h
FE
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
12
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
25
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
12
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 2 V, I
C
= 0.5 A
200
800
h
FE2
V
CE
= 2 V, I
C
= 1 A
60
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA
0.13
0.40
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 0.5 A, I
B
= 50 mA
1.2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistanse
*3
R
on
1.0
Electrical Characteristics T
a
= 25C 3C
Unit: mm
5.0
0.2
0.7
0.1
0.45
+0.15
0.1
2.5
+0.6
0.2
0.45
+0.15
0.1
2.5
1
2 3
+0.6
0.2
4.0
0.2
5.1
0.2
12.9
0.5
2.3
0.2
0.7
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measurement circuit
Rank
R
S
T
h
FE1
200 to 350
300 to 500
400 to 800
V
V
1 k
R
on
= V
B
1 000 ()
V
A
- V
B
f
= 1 kHz
V
= 0.3 V
V
B
I
B
= 1 mA
V
A
2SD1302
2
SJC00215BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
R
on
I
B
0
160
40
120
80
140
20
100
60
0
800
600
200
500
700
400
100
300
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
6
5
4
1
3
2
0
1.2
1.0
0.8
0.6
0.4
0.2
T
a
= 25C
2.5 mA
2.0 mA
1.5 mA
0.5 mA
1.0 mA
3.0 mA
3.5 mA
I
B
= 4.0 mA
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
= 25
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= -25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0
1 200
1 000
800
600
400
200
V
CE
= 2 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
-1
-10
-100
0
400
300
100
250
350
200
50
150
V
CB
= 10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
0
24
20
16
12
8
4
I
E
= 0
T
a
= 25C
f
= 1 MHz
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.01
0.1
1
10
0.1
1
10
100
1 000
f
= 1 kHz
V
= 0.3 V
R
on
measurement circuit
I
B
= 1 mA
V
V
B
V
A
Base current I
B
(mA)
ON resistance R
on
(
)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL