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Электронный компонент: 2SD1423

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Transistors
1
Publication date: April 2003
SJC00220BED
2SD1423, 2SD1423A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD1423
V
CBO
30
V
(Emitter open)
2SD1423A
60
Collector-emitter voltage 2SD1423
V
CEO
25
V
(Base open)
2SD1423A
50
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
*
P
C
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD1423
V
CBO
I
C
= 10 A, I
E
= 0
30
V
(Emitter open)
2SD1423A
60
Collector-emitter voltage
2SD1423
V
CEO
I
C
= 2 mA, I
B
= 0
25
V
(Base open)
2SD1423A
50
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 20 V, I
B
= 0
1
A
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 150 mA
85
340
h
FE2
V
CE
= 10 V, I
C
= 500 mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.6
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
2SD1423, 2SD1423A
2
SJC00220BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
0
160
40
120
80
500
400
300
200
100
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
a
= 25C
I
B
= 10 mA
7 mA
6 mA
9 mA
8 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0
300
250
200
150
100
50
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
- 0.1
-1
-10
-100
0
160
120
40
80
V
CB
= 10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
0
10
8
6
4
2
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
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2002 JUL