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Электронный компонент: 2SD1819A

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1
Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s
Features
q
High transition frequency f
T
.
q
Satisfactory linearity of forward current transfer ratio h
FE
.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC70
3:Collector
SMini Type Package
2.1
0.1
1.3
0.1
0.9
0.1
0.7
0.1
0.3
+0.1
0
0.15
+0.1
0.05
2.0
0.2
1.25
0.1
0.425
0.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
150
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
E
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 10V, I
E
= 10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 1mA, f = 10.7MHz
min
45
35
4
20
typ
50
500
max
10
100
0.5
1.5
Unit
A
V
V
V
V
MHz
pF
Marking symbol :
2Z
2
Transistor
2SC4417
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
C
re
-- V
CE
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
10
8
2
6
4
0
80
60
20
50
70
40
10
30
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
120
100
80
60
40
20
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
3.0
2.5
2.0
1.5
1.0
0.5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
3
10
30
100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)