Transistors
1
Publication date: April 2003
SJC00230BED
2SD1824
Silicon NPN epitaxial planar type
For low-frequency amplification
Features
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
High emitter-base voltage (Collector open) V
EBO
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
100
V
Collector-emitter voltage (Base open)
V
CEO
100
V
Emitter-base voltage (Collector open)
V
EBO
15
V
Collector current
I
C
20
mA
Peak collector current
I
CP
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
100
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
15
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 60 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 60 V, I
B
= 0
1
A
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA
400
1 200
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
0.05
0.20
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
90
MHz
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Rank
R
S
h
FE
400 to 800
600 to 1 200
Marking symbol: 1V
2SD1824
2
SJC00230BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
NV
I
C
NV
V
CE
0
160
40
120
80
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
12
10
8
2
6
4
0
80
60
20
40
T
a
= 25C
20
A
30
A
40
A
50
A
60
A
80
A
10
A
I
B
= 100 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
1 800
1 500
1 200
900
600
300
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
200
160
120
80
40
V
CB
= 10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1
10
100
0
6
5
4
3
2
1
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.01
0.1
1
0
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function
= FLAT
T
a
= 25C
5 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector current I
C
(mA)
1
10
100
0
100
80
60
40
20
I
C
= 1 mA
G
V
= 80 dB
Function
= FLAT
T
a
= 25C
5 k
R
g
= 100 k
22 k
Noise voltage NV
(mV
)
Collector-emitter voltage V
CE
(V)
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2002 JUL
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