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Электронный компонент: 2SD2051

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1
Power Transistors
2SD2051
Silicon NPN epitaxial planar type Darlington
For low-frequency amplification
s
Features
q
High foward current transfer ratio h
FE
q
Incorporating a built-in zener diode
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
10
60
10
5
2.5
1.6
12
2.0
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 10V, I
C
= 1.0A
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
V
CE
= 10V, I
C
= 10mA, f = 200MHz
min
50
50
5
4000
200
typ
max
1
1
70
70
40000
1.5
2.2
Unit
A
A
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
4000 to 10000 8000 to 20000 16000 to 40000
T
C
=25
C
Ta=25
C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
B
E
C
2
Power Transistors
2SD2051
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
4
3
1
2
Without heat sink
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
=100
A
90
A
80
A
70
A
60
A
50
A
40
A
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
T
C
=25C
25C
100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
100C
T
C
=25C
25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
2
10
3
10
4
10
5
10
6
V
CE
=10V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
20
16
12
8
4
18
14
10
6
2
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)