1
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
Allowing supply with the radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
15
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD2242
2SD2242A
2SD2242
2SD2242A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= 12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
200
500
500
2
10000
2.5
2
4
Unit
A
A
mA
V
V
V
MHz
s
s
s
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000 4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
0.2
0.55
0.1
2.5
0.2
2.5
0.2
4.2
0.2
13.0
0.2
2.5
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.25
0.2
1.2
0.1
0.65
0.1
0.55
0.1
C1.0
90
C1.0
1 2 3
1.05
0.1
0.35
0.1
B
E
C
2
Power Transistors
2SD2242, 2SD2242A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
10
8
6
4
2
I
B
=4.0mA
T
C
=25C
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=3V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=3V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
DC
2SD2242
2SD2242A
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
3
10
2
10
2
1
10
1
10
10
3
10
4
0.1
1
10
100
1000
Note: R
th
was measured at Ta=25C and under natural convection.
(1) Without heat sink
(2) With a 50
50
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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