1
Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
60V zener diode built in between collector and base.
q
Darlington connection.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
0.1
2.6
0.1
2.5
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
0.15
1.5
0.1
0.4
0.08
0.5
0.08
1.5
0.1
0.4
0.04
1.6
0.2
45
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
60
10
60
10
5
1.5
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 1.0A
*
I
C
= 1.0A, I
B
= 1.0mA
*
I
C
= 1.0A, I
B
= 1.0mA
*
V
CB
= 10V, I
E
= 50mA, f = 200MHz
min
50
50
6500
typ
150
max
1
2
85
85
40000
1.8
2.2
Unit
A
mA
V
V
V
V
MHz
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
B
C
E
Marking symbol :
1T
+25
+25
2
Transistor
2SD2416
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
50
A
60
A
70
A
V
CE
=10V
Ta=25C
I
B
=100
A
40
A
30
A
80
A
90
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
1
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
I
C
/I
B
=1000
25C
25C
Ta=100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
I
C
/I
B
=1000
Ta=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
2
10
3
10
4
10
5
10
6
V
CE
=10V
Ta=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
24
20
16
12
8
4
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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