1
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB710 and 2SB710A
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1
500
200
150
55 ~ +150
Unit
V
V
V
A
mA
mW
C
C
2SD602
2SD602A
2SD602
2SD602A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 50mA
*2
, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
40
typ
160
0.35
200
6
max
0.1
340
0.6
15
Unit
A
V
V
V
V
MHz
pF
*2
Pulse measurement
2SD602
2SD602A
2SD602
2SD602A
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2SD602
WQ
WR
WS
2SD602A
XQ
XR
XS
Marking symbol :
W
(2SD602)
X
(2SD602A)
Marking
Symbol
2
Transistor
2SD602, 2SD602A
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
20
16
4
12
8
0
800
600
200
500
700
400
100
300
Ta=25C
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
10
8
2
6
4
0
800
600
200
500
700
400
100
300
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
I
C
=2mA
Ta=25C
2SD602A
2SD602
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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