Transistors
1
Publication date: January 2003
SJC00200BED
2SD0965
(2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
5
A
Peak collector current
I
CP
8
A
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 7 V, I
C
= 0
0.1
A
Forward current transfer ratio
h
FE1
*
V
CE
= 2 V, I
C
= 0.5 A
230
600
h
FE2
V
CE
= 2 V, I
C
= 1 A
150
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 3 A, I
B
= 0.1 A
0.28
1.00
V
Transition frequency
f
T
V
CB
= 6 V, I
E
= -50 mA, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz
26
50
pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0
0.2
0.7
0.1
0.45
+0.15
0.1
2.5
+0.6
0.2
0.45
+0.15
0.1
2.5
1
2 3
+0.6
0.2
4.0
0.2
5.1
0.2
12.9
0.5
2.3
0.2
0.7
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
Q
R
h
FE1
230 to 380
340 to 600
Note) The part number in the parenthesis shows conventional part number.
2SD0965
2
SJC00200BED
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
V
BE
f
T
I
E
C
ob
V
CB
Safe operation area
0
160
40
120
80
140
20
100
60
0
1 000
800
600
400
200
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
2.4
2.0
1.6
1.2
0.8
0.4
T
a
= 25C
I
B
= 7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
= 2 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.001
0.01
0.1
1
10
T
a
= 75C
25
C
-25C
I
C
/ I
B
= 30
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
= 30
T
a
= -25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
0
600
500
400
300
200
100
V
CE
= 2 V
T
a
= 25C
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
0
400
300
100
200
V
CB
= 6 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(A)
1
10
100
0
100
80
60
40
20
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1
1
10
100
0.01
0.1
1
10
100
Single pulse
T
a
= 25C
t
= 10 ms
t
= 1 s
I
CP
I
C
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
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2002 JUL
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