1
Power F-MOS FETs
unit: mm
2SK3023 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
U Type Package
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 50V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 5A
V
GS
= 4V, I
D
= 5A
V
DS
= 10V, I
D
= 5A
I
DR
= 10A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 30V, I
D
= 5A
V
GS
= 10V, R
L
= 6
min
60
1
3
typ
50
70
5
300
165
65
15
70
290
860
max
10
10
2.5
80
110
-
1.4
12.5
125
Unit
A
A
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
C/W
C/W
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
60
20
10
20
5
10
1
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 0.1mH, I
L
= 10A, 1 pulse
6.50.1
5.30.1
4.350.1
4.60.1
2.30.1
0.750.1
1
2
3
0.930.1
2.50.1
0.8max
1.00.2
7.30.1
1.80.1
2.30.1
0.50.1
0.50.1
0.10.05
1.00.1
Internal Connection
G
D
S
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