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Электронный компонент: AN1101SSM

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Operational Amplifier
1
Publication date: August 2002
SFB00001CEB
AN1101SSM
CMOS single power supply
Overview
AN1101SSM is an operational amplifier with a single
power supply by CMOS diffusion process.
It has low current-consumption compared to general
purpose operational amplifier by bipolar diffusion process.
0 V to V
DD
is available for both input voltage and output
voltage. And this IC is widely applicable to the buttery-
driven equipment and to many amplifier circuits which
adopt small package products.
Features
Low current-consumption: I
DD
= 55 A (typ.), V
DD
= 3 V
Operating input/output voltage range: 0 V to V
DD
Small offset voltage: 0.5 mV (typ.)
Small input bias current: 1 pA (typ.)
Operating supply voltage range:
2.5 V to 5.5 V or
1.25 V to 2.75 V
Applications
Various small-size general consumer electronics equipment
Block Diagram
Pin No.
Symbol
Description
1
V
OUT
Output
2
GND (V
SS
)
Ground, V
SS
(negative supply) at using two power supply
3
V
IN
+
Input (positive)
4
V
IN
-
Input (negative)
5
V
DD
Power supply
Pin Descriptions
Unit: mm
SSMINI-5DA (Lead-free package)
4
3
5
2
1
3
4
0 to 0.10
2
1
5
0.20
0.20
1.20
0.10
1.60
0.10
1.00
0.10
1.60
0.10
0.50
Seating plane
0.60 max.
0.08
+0.10 -
0.05
0.20
+0.10
-0.05
0.50
0.10
M
0.10
V
OUT
V
DD
1
5
GND
(V
SS
)
2
V
IN
+
V
IN
-
3
4
Note) The AN1101SSM has been designed for general consumer electronics equipment, not for the specific one requiring such a
high reliability that may prevent it from threatening the human lives.
AN1101SSM
2
SFB00001CEB
Electrical Characteristics at V
DD
= 3.0 V, V
SS
= GND, T
a
= 25C 2C
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply voltage
V
DD
5.6
V
Differential input voltage
DV
IN
5.6
V
Input voltage
V
IN
V
SS
to V
DD
V
Supply current
I
DD
mA
Power dissipation
*2
P
D
50
mW
Operating ambient temperature
*1
T
opr
-30 to +85
C
Storage temperature
*1
T
stg
-55 to +125
C
Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for T
a
= 25C.
*2: The value at T
a
= +85C.
2. This IC is not suitable for car electrical equipment.
Recommended Operating Range
Parameter
Symbol
Range
Unit
Supply voltage
V
DD
2.5 to 5.5
V
1.25 to 2.75
Note) * : Except for the supply voltage ripple rejection ratio (SVRR), V
DD
= 3 V.
Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input offset voltage
V
IO
Buffer circuit
0.5
5.5
mV
Common-mode input voltage
CMV
IN
R
S
= 10 k, R
F
= 10 k
0
3
V
Open-loop gain
GV
f
= 100 Hz
60
90
dB
Maximum output amplitude voltage 1
V
OH
R
L
10 k
2.90
2.98
V
Maximum output amplitude voltage 2
V
OL
R
L
10 k
0.01
0.05
V
Common-mode input voltage
CMRR
V
IN
= 0.0 V to 3.0 V, R
S
= R
F
= 10 k
50
65
dB
rejection ratio
Supply voltage ripple rejection ratio
*
SVRR
V
DD
= 2.5 V to 5.5 V
55
70
dB
Supply current
I
DD
No load
55
100
A
Parameter
Symbol
Conditions
Reference
Unit
Offset current
I
O
1
pA
Input bias current
I
IO
1
pA
Slew rate
SR
R
L
10 k
0.35
V/
s
Zero-cross frequency
f
T
A
V
= 1
0.8
MHz
AN1101SSM
3
SFB00001CEB
Technical Data
P
D
T
a
curve of SSMINI-5DA
P
D
T
a
Main characteristics
Supply current
Supply voltage
Low-level output voltage
Output flow-in current
Po
wer dissipation P
D
(W)
0.000
0.050
0.100
0.120
0.150
Independent IC
without a heat sink
R
th( j-a)
= 833.3C/W
0
25
125
Ambient temperature T
a
(
C)
50
85
75
100
0.200
0
10
20
30
40
50
60
70
80
6
2.5
3.5
4.5
3
4
5
5.5
Supply voltage V
DD
(V)
Supply current I
DD
(
A)
Buffer circuit
V
IN
+
= V
DD
/ 2
No load
0
0.2
0.4
0.6
0.8
1.0
1.2
5
0
1
2
3
4
Output flow-in current I
O
(mA)
Low-level output voltage V
OL
(V)
Buffer circuit
V
DD
= 3 V
V
IN
+
= 0 V
High-level output voltage
Output flow-out current
Slew rate SR
5
0
1
2
3
4
Buffer circuit
V
DD
= 3 V
V
IN
+
= 3 V
0
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
Output flow-out current
-I
O
(mA)
High-level output voltage V
OL
(V)
Buffer circuit
V
DD
= 3 V
No load
0 V
3 V
0
10
20
30
40
50
(
s)
Output
Input
1 V
2 V
0 V
3 V
1 V
2 V
AN1101SSM
4
SFB00001CEB
Technical Data (continued)
Main characteristics (continued)
Offset voltage
Ambient temperature
Supply current
Ambient temperature
Voltage gain Phase
Frequency characteristics
-3
-2
-1
0
1
2
3
100
-50
-25
0
25
75
50
Ambient temperature T
a
(
C)
Offset voltage V
IO
(mV)
Buffer circuit
V
DD
= 3 V
V
IN
+
= V
DD
/ 2
100
-50
-25
0
25
75
50
Ambient temperature T
a
(
C)
Supply current I
DD
(
A)
Buffer circuit
V
DD
= 3 V
V
IN
+
= V
DD
/ 2
0
10
20
30
40
50
60
70
80
Voltage gain (dB)
Phase (

)
10M
1M
100k
100
10k
2k
Frequency f (Hz)
V
DD
= 3 V
A
V
= 40 dB
No load
-20
-10
0
10
20
30
40
50
60
0
Voltage gain
-45
90
180
45
135
Phase
Application Circuit Example
V
OUT
V
DD
1
5
GND
(V
SS
)
2
V
IN
+
V
IN
-
3
4
0.1
F
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
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2002 JUL