1
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 20mA
1.2
1.4
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output characteristics Collector cutoff current
I
CEO
V
CE
= 20V
100
nA
Collector current
I
C
*1
V
CC
= 2V, I
F
= 4mA. R
L
= 100
, d
= 1mm
23
160
A
Transfer
Leakage current
I
D
V
CC
= 2V, I
F
= 4mA, R
L
= 100
100
nA
characteristics
Collector to emitter saturation voltage V
CE(sat)
I
F
= 20mA, I
C
= 0.1mA
0.4
V
Response time
t
r
*2
V
CC
= 5V, I
C
= 0.1mA,
30
s
t
f
*2
R
L
= 1000
40
*1
Output Current (IC) measurement
*2
Response time measurement
method (see figure below.) circuit (see figure below.)
Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Input and output are handled electrically.
This product is not designed to withstand radiation.
Chip
center
C0.5
3.4
1.8
1
3
2
4
4.3
0.3
2.7
0.35
0.05
+0.1
0.05
0.15
1.5
0.85
4-0.7
4-0.5
Unit : mm
1: Emitter 3: Anode
2: Collector 4: Cathode
1: Anode 3: Emitter
2: Cathode 4: Collector
Pin connection
CNB1001
1
4
3
2
,
,,
Pin connection
CNB1002
3
2
1
4
,,
,
(Note) Tolerance unless otherwise specified is
0.2
,
,,
V
CC
R
L
I
F
I
C
,,
,,,
,,,
,,
d = 1mm
Evaporated Al
Glass plate
,,
,,
,
,
R
L
50
V
CC
,,,
,,,
,,,
d = 1mm
Evaporated Al
Glass plate
Sig.IN
Sig.
OUT
10%
90%
t
r
t
f
t
r
: Rise time
t
f
: Fall time
Sig.OUT
Sig.IN
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
6
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
35
V
transistor)
Emitter to collector voltage
V
ECO
6
V
Collector power dissipation
P
C
*2
75
mW
Temperature
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
40 to +100
C
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7
3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Overview
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infrared
light emitting diode which is integrated with a high sensitivity Si
phototransistor in a single resin package.
Color indication of classifications
Class
I
C
(
A)
Color
Q
23 to 50
Orange
R
41 to 90
White
S
74 to 160
Light blue
*1
Input power derating ratio is
1.0 mW/C at Ta
25C.
*2
Output power derating ratio is
1.0 mW/C at Ta
25C.
2
I
F
-- V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
0.8
1.2
1.6
2.4
2.0
0
0
Ta = 25C
60
50
40
30
20
10
Ambient temperature Ta (C )
0
20
40
60
80
100
0
25
I
C
-- I
F
Forward current I
F
(mA)
Collector current I
C
(
A)
800
400
200
600
8
16
24
0
0
V
CC
= 5V
Ta = 25C
R
L
= 100
d = 1mm
I
C
-- V
CE
Collector to emitter voltage V
CE
(V)
Collector current I
C
(
A)
600
400
300
200
100
500
1
4
5
6
7
8
0
0
d = 1mm
Ta = 25C
2
3
Distance d (mm)
I
C
-- d
100
60
40
20
80
Relative output current I
C
(%)
2
4
6
10
8
0
0
V
CE
= 2V
Ta = 25C
I
F
= 4mA
V
F
-- Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (C )
Forward voltage V
F
(V)
0
20
40
60
80
100
0
40 20
0
20
40
60
80
100
40 20
0
20
40
60
80
100
40 20
I
CEO
-- Ta
10
10
2
1
10
3
10
1
Ambient temperature Ta (C )
V
CE
= 10V
Dark current I
CEO
(
A)
10
4
1
10
10
1
t
r
, t
f
-- I
C
Collector current I
C
(mA)
Rise time , fall time t
r
, t
f
(
s)
10
1
10
2
10
3
10
2
10
1
V
CC
= 5V
Ta = 25C
: t
r
: t
f
Relative output current I
C
(%)
I
C
-- Ta
160
120
80
40
Ambient temperature Ta (C )
0
V
CC
= 2V
I
F
= 4mA
R
L
= 100
I
F
, I
C
-- Ta
Forward current, collector current I
F
, I
C
(mA)
I
F
I
C
15mA
10mA
8mA
6mA
4mA
2mA
I
F
= 20mA
10mA
1mA
I
F
= 50mA
100
1k
R
L
= 2k
d
,
,
CNB1001,CNB1002
Reflective Photosensors (Photo Reflectors)
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