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Электронный компонент: DN6849TE

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s Overview
The DN6849/SE/TE/S is a combination of a Hall element,
amplifier, Schmitt circuit, and stabilized power supply/temper-
ature compensator integrated on an identical chip by using the
IC technology. It amplifies Hall element output at the amplifi-
er, converts into a digital signal through the Schmitt circuit,
and drives the TTL or MOS IC directly.
s Features
High sensitivity and low drift
Stable temperature characteristics due to the additional tem-
perature compensator
Wide operating supply voltage range (V
CC
=4.5 to 16V)
Operating in alternative magnetic field
TTL and MOS ICs directly drivable by output
Output open collector
s Applications
Speed sensors
Position sensors
Rotation sensors
Keyboard switches
Microswitches
Note) This IC is not suitable for car electrical equipments.
DN6849/SE/TE/S
Hall IC (Operating Temperature Range
Topr = 40 to +100C,
Operating in Alternative
Magnetic Field)
Unit : mm
DN6849
SSIP003-P-0000A (E-3S)
1 : V
CC
2 : GND
3 : Output
0.5
0.1
5
1 2 3
2
5
5
2
1.27
4.0
0.3
0.7
4.5
0.3
0.43
+ 0.1
0.05
2.0
0.3
0.8
0.1
1.0
10.5
0.5
DN6849SE
4.52
0.3
0.55
0.15
0.4
0.1
1.54
0.1
1.27
R0.25
2 to 5
2
1 2 3
12.5
06.5
4.52
0.3
2
45
SSIP003-P-0000 (SE-3S)
Unit : mm
(0.4)
(0.72)
(1.0)
(1.0)
1 : V
CC
2 : GND
3 : Output
DN6849TE
4.0
0.3
0.6
0.15
0.5
0.1
1.2
0.1
1.27
1 2 3
3.3
0.3
(1.0)
(1.0)
SSIP003-P-0000B (TE-3S)
10.0
0.6
Unit : mm
(0.2)
(0.6)
(0.7)
1 : V
CC
2 : GND
3 : Output
1.6
3.0
0.3
0.6
0.2
ESOP004-P-0200 (SOH-4D)
1
2
4
3
5.4
0.4
3.0
0.3
1.5
0.3
0.4
0.2
0 to 0.1
0.15
0.95
0.2
0.3 to 0.5
DN6849S
Unit : mm
1 : V
CC
2 : NC or GND
3 : Output
4 : GND
Hall element
DN6849/SE/TE
Amp.
Schmitt trigger Output stage
3
2
1
V
CC
Output
GND
Stabilized power supply
temperature correction circuit
s Block Diagram
1
Hall element
DN6849S
Amp.
Schmitt trigger Output stage
3
4
2
V
CC
Output
GND
NC
or
GND
Stabilized power supply
temperature correction circuit
V
CC
I
CC
I
O
P
D
T
opr
T
stg
Supply voltage
Supply current
Circuit current
Power dissipation
Opearting ambient temperature
Storage temperature
V
mA
mA
mW
C
C
Parameter
Symbol
Rating
Unit
s Absolute Maximum Ratings (Ta=25C)
18
8
20
150
40 to+100
55 to+125
Parameter
Symbol
Condition
min
typ
max
Unit
s Electrical Characteristics (Ta=25C)
Operating flux density
17.5
B
1 (L to H)
mT
6
V
CC
=12V
B
2 (H to L)
17.5
mT
6
V
CC
=12V
Hysteresis width
7
BW
mT
10
V
CC
=12V
Low output voltage
V
OL
0.4
V
Supply current
mA
V
CC
=16V
I
CC
5.5
mA
V
CC
=4.5V
6
High output current
I
OH
10
A
V
CC
=4.5 to 16V, I
O
=12mA,
B=17.5mT
V
CC
=4.5 to 16V, V
O
=16V,
B=17.5mT
1.5
1.5
1.0
1.3
1.0 1.75
1.0
1.0
Unit : mm
The center of the Hall
element is in the hatched
area in the right figure.
DN6849
1.0
1.25
1.0 1.63
DN6849SE
1.0
1.15
1.0 1.5
DN6849TE
DN6849S
Distance from package
surface to sensor
DN6849
0.7
DN6849SE
0.42
DN6849TE
0.4
DN6849S
0.65
s Hall Element Position
Marking surface
Applied flux direction
Flux density (B)
Output voltage (V
O
)
B
1
B
2
s Flux-Voltage Conversion Characteristics
s Precaution on Use
1. Change of the operation magnetic flux density does not depend on the supply
voltage, because the stabilization power supply is built-in. (only for the range ;
V
CC
= 4.5 to 16V)
2. Change from "H" to "L" level increases the supply current by approx. 1mA.
Sample 2, B
L to H
Ambient temperature (C)
Supply current (mA)
Supply voltage Ambient temperature
8
7
6
5
4
3
2
1
0
50 25
0
25
50
75 100 125
V
CC
= 4.5V
V
CC
= 16V
Ambient temperature (C)
Operating flux density (mT)
Operating flux density Ambient temperature
20
10
0
10
20
50 25
0
25
50
V
CC
= 12V
75 100 125
Sample 2, B
H to L
Sample 3, B
H to L
Sample 1, B
H to L
Sample 3, B
L to H
Sample 1, B
L to H
Ambient temperature (C)
Output "L" level voltage (mV)
Output low level voltage Ambient temperature
100
90
80
70
60
50
40
30
20
10
0
50 25
0
25
50
V
CC
= 12V
I
O
= 12mA
75 100 125
Supply voltage (V)
Operating flux density (mT)
Operating flux density Supply voltage
20
10
0
10
20
0
2
4
6
8
10 12 14 16 18 20
Ta
= 25C
B
H to L
B
L to H
s Characteristics Curve