1
Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO92NL Package
5.0
0.2
13.5
0.5
0.7
0.2
8.0
0.2
1.27
1 2 3
1.27
4.0
0.2
0.45
+0.15
0.1
0.45
+0.15
0.1
2.3
0.2
0.7
0.1
2.54
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
7
1
500
1
150
55 ~ +150
Unit
V
V
V
A
mA
W
C
C
2SC4208
2SC4208A
2SC4208
2SC4208A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
B
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
7
85
40
typ
0.35
1.1
150
6
max
0.1
340
0.6
1.5
15
Unit
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
*2
Pulse measurement
2SC4208
2SC4208A
2SC4208
2SC4208A
2
Transistor
2SC4208, 2SC4208A
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
20
16
4
12
8
0
800
600
200
500
700
400
100
300
Ta=25C
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
10
8
2
6
4
0
800
600
200
500
700
400
100
300
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
I
C
=2mA
Ta=25C
2SA4208A
2SA4208
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
3
Transistor
2SC4208, 2SC4208A
I
CEO
-- Ta
Area of safe operation (ASO)
0
200
160
40
120
80
1
10
10
2
10
3
10
4
V
CE
=10V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
2SC4208A
2SC4208
t=1s
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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