Switching Diodes
1
MA2J113
Silicon epitaxial planar type
For switching circuits
I Features
Small S-mini type package, allowing high-density mounting
Ensuring the average forward current capacity I
F(AV)
= 200 mA
High breakdown voltage (V
R
= 80 V)
I Absolute Maximum Ratings T
a
= 25C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
80
V
Peak reverse voltage
V
RM
80
V
Forward current (DC)
I
F
200
mA
Peak forward current
I
FM
600
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R1
V
R
= 15 V
50
nA
I
R2
V
R
= 75 V
500
nA
I
R3
V
R
= 75 V, T
a
= 100C
100
A
Forward voltage (DC)
V
F
I
F
= 200 mA
1.1
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
4
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
10
ns
I
rr
= 0.1 I
R
, R
L
= 100
I Electrical Characteristics T
a
= 25C
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Marking Symbol: 1D
Noe)
* : t = 1 s
1
2
K
A
0.625
0.3
1.25
0.1
0.5
0.1
0.7
0.1
2.5
0.2
1.7
0.1
0.4
0.1
0.4
0.1
0.16
+
0.1
-
0.06
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
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