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Электронный компонент: MA153

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Switching Diodes
1
MA3X153, MA3X153A
Silicon epitaxial planar type
For switching circuits
I Features
Small terminal capacitance, C
t
Two diodes are connected in series in the package
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage
MA3X153
V
R
40
V
(DC)
MA3X153A
80
Peak reverse
MA3X153
V
RM
40
V
voltage
MA3X153A
80
Forward current
Single
I
F
100
mA
(DC)
Series
65
Peak forward
Single
I
FM
200
mA
current
Series
130
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Internal Connection
Marking Symbol
MA3X153 : MC
MA3X153A : MP
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
MA3X153
I
R
V
R
= 40 V
0.1
A
MA3X153A
V
R
= 75 V
0.1
Forward voltage (DC)
V
F
I
F
= 100 mA
1.2
V
Reverse voltage (DC)
MA3X153
V
R
I
R
= 100 A
40
V
MA3X153A
80
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
5
pF
Reverse recovery time
t
rr
*1
I
F
= 10 mA, V
R
= 6 V
150
ns
I
rr
= 0.1 I
R
, R
L
= 100
t
rr1
*2
I
F
= 10 mA, V
R
= 6 V
9
ns
I
rr
= 0.1 I
R
, R
L
= 100
I Electrical Characteristics T
a
= 25
C
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
1
3
2
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+
0.1
-
0.05
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
1.45
0.1 to 0.3
2.9
+
0.2
-
0.05
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
1 : Anode 1
2 : Cathode 2
3 : Anode 2
Cathode 1
Switching Diodes
2
I
F
V
F
V
F
T
a
I
R
V
R
I
R
V
R
I
F
V
F
MA3X153, MA3X153A
V
F
T
a
I
R
T
a
I
R
T
a
C
t
V
R
10
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA
)
2
3
D
1
(1-3)
1
T
a
= 25C
D
1
(1-3)
10
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA
)
2
3
D
2
(3-2)
1
T
a
= 25C
D
2
(3-2)
10
-2
10
-1
1
10
10
2
10
3
Reverse voltage V
R
(V)
Reverse current I
R
(
A
)
0
10
20
30
40
50
2
3
D
2
(3-2)
D
1
(1-3)
1
T
a
= 125C
D
1
(
1-3
)
D
1
(1-3)
D
2
(
3-2
)
D
2
(3-2)
T
a
= 25C
10
-3
10
-2
10
-1
1
10
Reverse voltage V
R
(V)
Reverse current I
R
(
A
)
0
20
40
60
80
100
2
3
D
2
(3-2)
D
1
(1-3)
1
T
a
= 125C
T
a
= 25C
D
1
(1-3)
D
1
(1-3)
D
2
(3-2)
D
2
(3-2)
0
0.2
0.4
0.6
0.8
1.0
-40
0
40
80
120
160
Ambient temperature T
a
(
C)
Forward voltage V
F
(V
)
2
3
D
1
(1-3)
1
I
F
= 10 mA
1 mA
3 mA
0.1 mA
0
0.2
0.4
0.6
0.8
1.0
-40
0
40
80
120
160
Ambient temperature T
a
(
C)
Forward voltage V
F
(V
)
2
3
D
2
(3-2)
1
I
F
= 10 mA
1 mA
3 mA
0.1 mA
10
-3
-40
0
40
80
120
10
-2
10
-1
1
10
10
2
Ambient temperature T
a
(
C)
Reverse current I
R
(nA
)
2
3
D
2
(3-2)
D
1
(1-3)
1
D
1
(1-3)
V
R
= 80 V
D
2
(3-2)
40 V
80 V
40 V
10
-2
-40
0
40
80
120
10
-1
1
10
10
2
Ambient temperature T
a
(
C)
Reverse current I
R
(
A
)
10
3
D
1
(1-3)
D
2
(3-2)
V
R
=
40 V
2
3
D
1
(1-3)
D
2
(3-2)
1
0.1
1
0.2
2
0.3
3
0.5
5
0
10
20
30
40
50
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
1
3
2
f
= 1 MHz
T
a
= 25C
D
2
(3-2)
D
1
(1-3)
D
1
(1-3)
D
2
(3-2)