1
Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
Two MA3X704As are contained in one package (Two diodes in a
different direction)
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
)
Optimum for high-frequency rectification because of its short re-
verse recovery time (t
rr
)
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Peak forward
Single
I
FM
150
mA
current
Double
*
110
Forward current
Single
I
F
30
mA
(DC)
Double
*
20
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Note) * : Value per chip
Internal Connection
Marking Symbol: M1P
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
1
A
Forward voltage (DC)
V
F1
I
F
= 1 mA
0.4
V
V
F2
I
F
= 30 mA
1.0
V
Terminal capacitance
C
t
V
R
= 1 V, f = 1 MHz
1.5
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
1.0
ns
I
rr
= 1 mA, R
L
= 100
Detection efficiency
V
in
= 3 V
(peak)
, f
= 30 MHz
65
%
R
L
= 3.9 k, C
L
= 10 pF
I Electrical Characteristics T
a
= 25C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
0.5 R
1
2
4
3
0.95
0.95
1.9
0.2
0.6
+
0.1
-
0
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
0.4
+
0.1
-
0.05
0.2
0.4
+
0.1
-
0.05
1.45
0.1 to 0.3
0.5
2.9
+
0.2
-
0.05
4
3
1
2
Bias Aplication Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
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