1
Schottky Barrier Diodes (SBD)
Marking Symbol: M3C
MA3X740
Silicon epitaxial planar type
For super high speed switching circuit
For small current rectification
I Features
Two MA3X721s are contained in one package (series connec-
tion)
Allowing to rectify under (I
F(AV)
= 200 mA) condition
(single diode value)
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Average forward
Single
I
F(AV)
200
mA
current
Double
*1
130
Peak forward
Single
I
FM
300
mA
current
Double
*1
220
Non-repetitive peak
Single
I
FSM
1
A
forward surge current
*2
Double
*1
0.7
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
50
A
Forward voltage (DC)
V
F
I
F
= 200 mA
0.55
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
30
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
3
ns
I
rr
= 10 mA, R
L
= 100
I Electrical Characteristics T
a
= 25C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 1 000 MHz
3. * : t
rr
measuring instrument
Internal Connection
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package (3-pin)
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+
0.1
-
0.05
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
1.45
0.1 to 0.3
2.9
+
0.2
-
0.05
1
3
2
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
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