1
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
s
Resistance by Part Number
Marking Symbol
(R
1
)
(R
2
)
q
UN2111
6A
10k
10k
q
UN2112
6B
22k
22k
q
UN2113
6C
47k
47k
q
UN2114
6D
10k
47k
q
UN2115
6E
10k
--
q
UN2116
6F
4.7k
--
q
UN2117
6H
22k
--
q
UN2118
6I
0.51k
5.1k
q
UN2119
6K
1k
10k
q
UN2110
6L
47k
--
q
UN211D
6M
47k
10k
q
UN211E
6N
47k
22k
q
UN211F
6O
4.7k
10k
q
UN211H
6P
2.2k
10k
q
UN211L
6Q
4.7k
4.7k
q
UN211M
EI
2.2k
47k
q
UN211N
EW
4.7k
47k
q
UN211T
EY
22k
47k
q
UN211V
FC
2.2k
2.2k
q
UN211Z
FE
4.7k
22k
s
Absolute Maximum Ratings
(Ta=25C)
1:Base
2:Emitter
EIAJ:SC-59
3:Collector
Mini Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
B
C
R1
R2
E
2
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
UN2111
0.5
UN2112/2114/211E/211D/211M/211N/211T
0.2
UN2113
0.1
UN2115/2116/2117/2110
0.01
UN211F/211H
I
EBO
V
EB
= 6V, I
C
= 0
1.0
mA
UN2119
1.5
UN2118/211L/211V
2.0
UN211Z
0.4
Collector to base voltage
V
CBO
I
C
= 10mA, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UN2111
35
UN2112/211E
60
UN2113/2114/211M
80
UN2115*/2116*/2117*/2110*
160
460
UN2119/211F/211D/211H
h
FE
V
CE
= 10V, I
C
= 5mA
30
UN2118/211L
20
UN211N/211T
80
400
UN211V
6
20
UN211Z
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
UN211V
I
C
= 10mA, I
B
= 1.5mA
0.07
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UN2113
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UN211D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UN211E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
UN2111/2114/2115
10
UN2112/2117/211T
22
UN2113/2110/211D/211E
47
UN2116/211F/211L/211N/211Z
R
1
(30%)
4.7
(+30%)
k
UN2118
0.51
UN2119
1
UN211H/211M/211V
2.2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UN2115/2116/2117/2110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
3
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s
Electrical Characteristics (continued)
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
UN2111/2112/2113/211L
0.8
1.0
1.2
UN2114
0.17
0.21
0.25
UN2118/2119
0.08
0.1
0.12
UN211D
4.7
UN211E
2.14
UN211F/211T
R
1
/R
2
0.47
UN211H
0.17
0.22
0.27
UN211M
0.047
UN211N
0.1
UN211V
1.0
UN211Z
0.21
Resis-
tance
ratio
4
Transistors with built-in Resistor
Common characteristics chart
P
T
-- Ta
Characteristics charts of UN2111
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
5
Transistors with built-in Resistor
Characteristics charts of UN2112
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN2113
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
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