1
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
s
Resistance by Part Number
Marking Symbol
(R
1
)
(R
2
)
q
UN2211
8A
10k
10k
q
UN2212
8B
22k
22k
q
UN2213
8C
47k
47k
q
UN2214
8D
10k
47k
q
UN2215
8E
10k
--
q
UN2216
8F
4.7k
--
q
UN2217
8H
22k
--
q
UN2218
8I
0.51k
5.1k
q
UN2219
8K
1k
10k
q
UN2210
8L
47k
--
q
UN221D
8M
47k
10k
q
UN221E
8N
47k
22k
q
UN221F
8O
4.7k
10k
q
UN221K
8P
10k
4.7k
q
UN221L
8Q
4.7k
4.7k
q
UN221M
EL
2.2k
47k
q
UN221N
EX
4.7k
47k
q
UN221T
EZ
22k
47k
q
UN221V
FD
2.2k
2.2k
q
UN221Z
FF
4.7k
22k
s
Absolute Maximum Ratings
(Ta=25C)
1:Base
2:Emitter
EIAJ:SC-59
3:Collector
Mini Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
B
C
R1
R2
E
2
Transistors with built-in Resistor
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
UN2211
0.5
UN2212/2214/221E/221D/221M/221N/221T
0.2
UN2213
0.1
UN2215/2216/2217/2210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UN221F/221K
1.0
UN2219
1.5
UN2218/221L/221V
2.0
UN221Z
0.4
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UN2211
35
UN2212/221E
60
UN2213/2214/221M
80
UN2215*/2216*/2217*/2210*
h
FE
V
CE
= 10V, I
C
= 5mA
160
460
UN221F/221D/2219
30
UN2218/221K/221L
20
UN221N/221T
80
400
--
UN221V
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
UN221V
I
C
= 10mA, I
B
= 1.5mA
0.04
0.25
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UN2213/221K
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UN221D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UN221E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 2mA, f = 200MHz
150
MHz
UN2211/2214/2215/221K
10
UN2212/2217/221T
22
UN2213/221D/221E/2210
47
UN2216/221F/221L/221N/221Z
R
1
(30%)
4.7
(+30%)
k
UN2218
0.51
UN2219
1
UN221M/221V
2.2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UN2215/2216/2217/2210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
3
Transistors with built-in Resistor
s
Electrical Characteristics (continued)
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
UN2211/2212/2213/221L
0.8
1.0
1.2
UN2214
0.17
0.21
0.25
UN2218/2219
0.08
0.1
0.12
UN221D
4.7
UN221E
2.14
UN221F/221T
R
1
/R
2
0.47
UN221K
2.13
UN221M
0.047
UN211N
0.1
UN211V
1.0
UN211Z
0.21
Resis-
tance
ratio
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
4
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart
P
T
-- Ta
Characteristics charts of UN2211
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
5
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2212
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN2213
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.9mA
0.8mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
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