Transistors with built-in Resistor
1
Publication date: December 2003
SJH00006CED
UNR211x Series
(UN211x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
Marking Symbol (R
1
)
(R
2
)
UNR2110 (UN2110)
6L
47 k
UNR2111 (UN2111)
6A
10 k
10 k
UNR2112 (UN2112)
6B
22 k
22 k
UNR2113 (UN2113)
6C
47 k
47 k
UNR2114 (UN2114)
6D
10 k
47 k
UNR2115 (UN2115)
6E
10 k
UNR2116 (UN2116)
6F
4.7 k
UNR2117 (UN2117)
6H
22 k
UNR2118 (UN2118)
6I
0.51 k
5.1 k
UNR2119 (UN2119)
6K
1 k
10 k
UNR211D (UN211D)
6M
47 k
10 k
UNR211E (UN211E)
6N
47 k
22 k
UNR211F (UN211F)
6O
4.7 k
10 k
UNR211H (UN211H)
6P
2.2 k
10 k
UNR211L (UN211L)
6Q
4.7 k
4.7 k
UNR211M (UN211M)
EI
2.2 k
47 k
UNR211N (UN211N)
EW
4.7 k
47 k
UNR211T (UN211T)
EY
22 k
47 k
UNR211V (UN211V)
FC
2.2 k
2.2 k
UNR211Z (UN211Z)
FE
4.7 k
22 k
Absolute Maximum Ratings T
a
= 25C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
P
T
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
UNR211x Series
2
SJH00006CED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
A
Emitter-base
UNR2110/2115/2116/2117
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.01
mA
cutoff current UNR2113
- 0.1
(Collector open) UNR2112/2114/211D/
- 0.2
211E/211M/211N/211T
UNR211Z
- 0.4
UNR2111
- 0.5
UNR211F/211H
-1.0
UNR2119
-1.5
UNR2118/211L/211V
-2.0
Forward current
UNR211V
h
FE
V
CE
= -10 V, I
C
= -5 mA
6
20
transfer ratio
UNR2118/211L
20
UNR2119/211D/211F/211H
30
UNR2111
35
UNUNR2112/211E
60
UNR211Z
60
200
UNR2113/2114/211M
80
UNR211N/211T
80
400
UNR2110
*
/2115
*
/2116
*
/2117
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
UNR211V
I
C
= -10 mA, I
B
= -1.5 mA
Output voltage high-level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Output voltage low-level
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNR2113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
UNR211D
V
CC
= -5 V, V
B
= -10 V, R
L
= 1 k
UNR211E
V
CC
= -5 V, V
B
= -6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
UNR2114/2119/211E
V
CB
= -10 V, I
E
= 2 mA, f = 200 MHz
150
211F/211H
Input resistance
UNR2118
R
1
-30%
0.51
+30%
k
UNR2119
1.0
UNR211H/211M/211V
2.2
UNR2116/211F/211L/211N/211Z
4.7
UNR2111/2114/2115
10
UNR2112/2117/211T
22
UNR2110/2113/211D/211E
47
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
UNR211x Series
3
SJH00006CED
Electrical Characteristics (continued) T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance ratio UNR211M
R
1
/R
2
0.047
UNR211N
0.1
UNR2118/2119
0.08
0.10
0.12
UNR211Z
0.21
UNR2114
0.17
0.21
0.25
UNR211H
0.17
0.22
0.27
UNR211T
0.47
UNR211F
0.37
0.47
0.57
UNR211V
1.0
UNR2111/2112/2113/211L
0.8
1.0
1.2
UNR211E
1.70
2.14
2.60
UNR211D
3.7
4.7
5.7
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
-0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Characteristics charts of UNR2110
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
UNR211x Series
4
SJH00006CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2111
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
UNR211x Series
5
SJH00006CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2112
Characteristics charts of UNR2113
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9mA
- 0.8mA
- 0.7mA
- 0.6mA
- 0.5mA
- 0.4mA
- 0.3mA
- 0.2mA
- 0.1mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75
C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(A
)
Input voltage V
IN
(V)
V
O
=
-5 V
T
a
= 25
C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
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