1
Composite Transistors
XP06116
(XP6116)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s
Features
q
Two elements incorporated into one package.
(Transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
UNR1116(UN1116)
2 elements
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
6Y
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Rating
of
element
Overall
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
Emitter cutoff current
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 5mA
160
460
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE
= 10V, I
C
= 5mA
0.5
0.99
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
OL
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
Input resistance
R
1
30%
4.7
+30%
k
*1
Ratio between 2 elements
1 : Emitter (Tr1)
4 : Collector (Tr2)
2 : Emitter (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
6 : Collector (Tr1)
EIAJ : SC88
SMini6-G1 Package
5
10
2.1
0.1
1.25
0.10
1
3
2
0.2
0.05
0.12
+0.05
0.02
0.2
0.1
(0.425)
1.3
0.1
2.0
0.1
0 to 0.1
0.9
0.1
0.9
+0.2 0.1
6
5
4
(0.65) (0.65)
1
Tr2
Tr1
2
3
4
5
6
Note) The Part number in the Parenthesis shows conventional part number.
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2001 MAR
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