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Электронный компонент: XP06401

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Publication date: February 2004
SJJ00212BED
Composite Transistors
XP06401
(XP6401)
Silicon PNP epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SB0709A (2SB709A) 2
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Internal Connection
Marking Symbol: 5O
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-60
V
Collector-emitter voltage (Base open)
V
CEO
-50
V
Emitter-base voltage (Collector open)
V
EBO
-7
V
Collector current
I
C
-100
mA
Peak collector current
I
CP
-200
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
1
2
3
4
6
5
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -10 V, I
B
= 0
-100
A
Forward current transfer ratio
h
FE
V
CE
= -10 V, I
C
= -2 mA
160
460
h
FE
ratio
*
h
FE(Small/
V
CE
= -10 V, I
C
= -2 mA
0.50
0.99
Large)
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
- 0.5
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
2.7
pF
(Common base, input open circuited)
5
10
2.1
0.1
1.25
0.10
1
3
2
0.2
0.05
0.12
+0.05
0.02
0.2
0.1
(0.425)
1.3
0.1
2.0
0.1
0 to 0.1
0.9
0.1
0.9
+0.2 0.1
6
5
4
(0.65) (0.65)
1: Emitter (Tr1)
4: Collector (Tr2)
2: Emitter (Tr2)
5: Base (Tr1)
3: Base (Tr2)
6: Collector (Tr1)
EIAJ: SC-88
SMini6-G1 Package
XP06401
2
SJJ00212BED
P
T
T
a
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
0
160
40
120
80
0
250
100
200
50
150
Total power dissipation
P
T
(mW
)
Ambient temperature T
a
(
C)
0
0
-4
-8
-12
-16
-60
-50
-40
-30
-20
-10
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= - 300 A
-250 A
-200 A
-150 A
-100 A
-50 A
0
0
-100
-200
-300
-400
-60
-50
-40
-30
-20
-10
Base current I
B
(
A)
Collector current I
C
(mA
)
V
CE
= -5 V
T
a
= 25C
0
0
-0.4
-0.8
-1.2
-1.6
-400
-350
-300
-250
-200
-150
-100
-50
Base-emitter voltage V
BE
(V)
Base current I
B
(
A
)
V
CE
= -5 V
T
a
= 25C
0
0
-2.0
-1.6
-1.2
-0.8
-0.4
-240
-200
-160
-120
-80
-40
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
= -5 V
T
a
= 75C
-25C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
-10
-3
-1
-10
-2
-10
-1
-1
-10
-10
-10
2
-10
3
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
0
600
500
400
300
200
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
-1
-10
-10
2
-10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
40
80
120
160
140
100
60
20
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
10
-1
1
10
10
2
V
CB
=
-10 V
T
a
= 25
C
0
8
7
6
5
4
3
2
1
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
-1
-10
-10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
XP06401
3
SJJ00212BED
NF
I
E
NF
I
E
h parameter
I
E
h parameter
V
CE
0
6
5
4
3
2
1
Noise figure NF
(dB
)
Emitter current I
E
(mA)
10
-2
10
-1
1
10
V
CB
= -5 V
f
= 1 kHz
R
g
= 2 k
T
a
= 25C
0
20
2
18
4
6
8
10
12
14
16
Noise figure NF
(dB
)
Emitter current I
E
(mA)
10
-1
1
10
V
CB
= -5 V
R
g
= 50 k
T
a
= 25C
f
= 100 Hz
10 kHz
1 kHz
h parameter
Emitter current I
E
(mA)
1
10
-1
10
10
2
1
10
V
CE
= -5 V
f
= 270 Hz
T
a
= 25C
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
h parameter
Collector-emitter voltage V
CE
(V)
1
-1
10
10
2
-10
-10
2
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
I
E
= 2 mA
f
= 270 Hz
T
a
= 25C
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2003 SEP