1
Composite Transistors
XP04401
(XP4401)
Silicon PNP epitaxial planer transistor
For general amplification
s
Features
q
Two elements incorporated into one package.
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
2SB0709A(2SB709A)
2 elements
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5K
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Rating
of
element
Overall
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10
A, I
C
= 0
7
V
Collector cutoff current
I
CBO
V
CB
= 20V, I
E
= 0
0.1
A
I
CEO
V
CE
= 10V, I
B
= 0
100
A
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 2mA160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 10mA 0.3
0.5
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
2.7
pF
1
6
5
Tr2
Tr1
2
3
4
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2)
6 : Collector (Tr1)
EIAJ : SC88
SMini6-G1 Package
5
10
2.1
0.1
1.25
0.10
1
3
2
0.2
0.05
0.12
+0.05
0.02
0.2
0.1
(0.425)
1.3
0.1
2.0
0.1
0 to 0.1
0.9
0.1
0.9
+0.2 0.1
6
5
4
(0.65) (0.65)
Note) The Part number in the Parenthesis shows conventional part number.
2
Composite Transistors
XP04401
P
T
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
0
18
2 4 6 8 10 12 14 16
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 300
A
250
A
200
A
150
A
100
A
50
A
0
0
100
200
300
400
60
50
40
30
20
10
Base current I
B
(
A)
Collector current I
C
(mA
)
V
CE
= 5V
Ta=25C
0
0
0.4
0.8
1.2
1.6
400
350
300
250
200
150
100
50
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
V
CE
= 5V
Ta=25C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
V
CE
= 5V
Ta=75C
25C
25C
0.001
0.003
1
3
0.01
0.03
0.1
0.3
1
3
10
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
600
500
400
300
200
100
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1
0.3
40
80
120
160
140
100
60
20
1
3
10
30
100
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
=10V
Ta=25C
0
1
5
20
2
8
7
6
5
4
3
2
1
3
50
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
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2001 MAR
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