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Электронный компонент: BAV21/A52R

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DATA SHEET
Product specification
Supersedes data of 1996 Sep 17
1999 May 25
DISCRETE SEMICONDUCTORS
BAV20; BAV21
General purpose diodes
M3D176
1999 May 25
2
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 150 V, 200 V
Repetitive peak reverse voltage:
max. 200 V, 250 V
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
k
a
1999 May 25
3
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAV20
-
200
V
BAV21
-
250
V
V
R
continuous peak reverse voltage
BAV20
-
150
V
BAV21
-
200
V
I
F
continuous forward current
see Fig.2; note 1
-
250
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
400
mW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1999 May 25
4
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
-
1.0
V
I
F
= 200 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= V
Rmax
-
100
nA
V
R
= V
Rmax
; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
5
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.8
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
1999 May 25
5
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG449
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 May 25
6
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
1
IR
(
A)
MGD009
V
R
= V
Rmax
.
Solid line; maximum values.
Dotted line; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1.6
1.4
1.0
0.8
1.2
MGD005
VR (V)
Cd
(pF)
Fig.7
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
(1) BAV21.
(2) BAV20.
handbook, halfpage
0
200
300
0
100
200
MGL588
100
(1)
VR
(V)
Tamb (
o
C)
(2)
1999 May 25
7
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
Fig.8 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) I
R
= 3 mA.
1999 May 25
8
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Note
1. The marking band indicates the cathode.
SOD27
DO-35
A24
SC-40
97-06-09
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
UNIT
b
max.
mm
0.56
D
max.
G1
max.
25.4
4.25
1.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
L
D
L
b
(1)
0
1
2 mm
scale
1999 May 25
9
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
1999 May 25
10
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
1999 May 25
11
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
65
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Printed in The Netherlands
115002/03/pp12
Date of release: 1999 May 25
Document order number:
9397 750 05895