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Электронный компонент: 1PS70SB44

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DATA SHEET
Product specification
Supersedes data of 2002 Jul 02
2002 Aug 06
DISCRETE SEMICONDUCTORS
BAP70-02
Silicon PIN diode
M3D319
2002 Aug 06
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
FEATURES
High voltage, current controlled RF resistor for
attenuators
Low diode capacitance
Very low series inductance.
APPLICATIONS
RF attenuators
(SAT)TV
Car radio.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
1
2
Top view
MAM405
Marking code: K8.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
50
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
= 90
C
-
415
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA
0.9
1.1
V
I
R
reverse leakage current
V
R
= 50 V
-
20
nA
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
570
-
fF
V
R
= 1 V; f = 1 MHz
400
-
fF
V
R
= 5 V; f = 1 MHz
270
-
fF
V
R
= 20 V; f = 1 MHz
200
250
fF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz
77
100
I
F
= 1 mA; f = 100 MHz
40
50
I
F
= 10 mA; f = 100 MHz
5.4
7
I
F
= 100 mA; f = 100 MHz
1.4
1.9
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
1.25
-
s
L
S
series inductance
I
F
= 100 mA; f = 100 MHz
0.6
-
nH
2002 Aug 06
3
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
145
K/W
GRAPHICAL DATA
handbook, halfpage
10
3
10
2
10
1
MCE007
10
-
1
1
10
rD
(
)
IF (mA)
10
2
Fig.2
Forward resistance as a function of forward
current; typical values.
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
0
5
10
Cd
(fF)
20
VR (V)
600
0
200
400
500
100
300
15
MCE008
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
2002 Aug 06
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD523
SC-79
98-11-25
Plastic surface mounted package; 2 leads
SOD523
0
0.5
1 mm
scale
D
1
2
HE
E
bp
A
c
v
M
A
A
UNIT
bp
c
D
E
v
mm
0.35
0.25
0.2
0.1
0.15
0.9
0.7
1.3
1.1
A
0.7
0.5
HE
1.7
1.5
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)
2002 Aug 06
5
Philips Semiconductors
Product specification
Silicon PIN diode
BAP70-02
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.