DATA SHEET
Product specification
1996 Oct 14
DISCRETE SEMICONDUCTORS
1PS76SB10
Schottky barrier diode
k, halfpage
M3D049
1996 Oct 14
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB10
FEATURES
Low forward voltage
Guard ring protected
Very small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: S0.
The marking bar indicates the cathode.
handbook, 4 columns
k
a
MAM283
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
600
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
1996 Oct 14
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB10
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
240
mV
I
F
= 1 mA
320
mV
I
F
= 10 mA
400
mV
I
F
= 30 mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; note 1; see Fig.3
2
A
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.4
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
1996 Oct 14
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB10
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.2
Forward current as a function of forward
voltage; typical values.
0
10
20
30
V (V)
R
10
3
I
R
(
A)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
0
10
20
30
0
5
10
15
V (V)
R
C d
(pF)
MSA891
f = 1 MHz; T
amb
= 25
C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 14
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB10
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
The marking bar indicates the cathode.
Fig.5 SOD323.
handbook, full pagewidth
1.8
1.6
2.7
2.3
0.40
0.25
1.35
1.15
1.00
max
0.25
0.10
MBC672 - 1
0.05
max
0.55
0.40
,
,
A
0.2
A
M
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