Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
2001 Feb 16
DISCRETE SEMICONDUCTORS
1PS88SB82
Schottky barrier triple diode
book, halfpage
MBD128
2001 Feb 16
2
Philips Semiconductors
Product specification
Schottky barrier triple diode
1PS88SB82
FEATURES
Low forward voltage
Low diode capacitance
Three independent diodes in a small SMD plastic
package.
APPLICATIONS
UHF mixers
Sampling circuits
Modulators
Phase detectors.
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 (SC-88) small SMD plastic
package. ESD sensitive device, observe handling
precautions.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
anode (a3)
4
cathode (k3)
5
cathode (k2)
6
cathode (k1)
handbook, halfpage
MGU324
1
2
6
5
3
4
MSA370
1
2
3
6
5
4
Top view
Fig.1
Simplified outline (SOT363; SC-88)
and symbol.
Marking code: E1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
15
V
I
F
continuous forward voltage
-
30
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+150
C
2001 Feb 16
3
Philips Semiconductors
Product specification
Schottky barrier triple diode
1PS88SB82
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
416
K/W
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: pulse width = 300
s;
= 0.02.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see note 1 and Fig.2
I
F
= 1 mA
-
340
mV
I
F
= 30 mA
-
700
mV
I
R
reverse current
V
R
= 1 V; see Fig.3; note 1
-
0.2
A
r
D
diode forward resistance
f = 1 kHz; I
F
= 5 mA; see Fig.5
12
-
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.4
1
-
pF
2001 Feb 16
4
Philips Semiconductors
Product specification
Schottky barrier triple diode
1PS88SB82
GRAPHICAL DATA
handbook, halfpage
1.6
0
(3)
0.4
0.8
1.2
VF (V)
IF
(mA)
10
3
10
2
10
1
MLD549
(1)
(2)
(1)
(2)
(3)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
15
10
VR (V)
IR
(
A)
5
0
(3)
MLD550
10
3
10
2
10
1
10
-
1
10
-
2
(1)
(2)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
10
1.2
0
0.4
0.6
0.8
1
2
Cd
(pF)
VR (V)
4
6
8
MLD551
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
10
3
10
2
10
1
MLD552
10
-
1
1
IF (mA)
rD
(
)
10
10
2
Fig.5
Differential diode forward resistance as a
function of forward current; typical values.
f = 1 MHz; T
amb
= 25
C.
2001 Feb 16
5
Philips Semiconductors
Product specification
Schottky barrier triple diode
1PS88SB82
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
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