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Электронный компонент: 74AHC1G66GW

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DATA SHEET
Product specification
Supersedes data of 2002 Feb 15
2002 Jun 06
INTEGRATED CIRCUITS
74AHC1G66; 74AHCT1G66
Bilateral switch
2002 Jun 06
2
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
FEATURES
Very low ON-resistance:
26
(typical) at V
CC
= 3.0 V
16
(typical) at V
CC
= 4.5 V
14
(typical) at V
CC
= 5.5 V.
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353 and SOT753 package
Output capability: non standard
Specified from
-
40 to +125
C.
DESCRIPTION
The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G66 provides an analog switch.
The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
C; t
r
= t
f
3 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ ((C
L
+ C
S
)
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
C
S
= maximum switch capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PZH
/t
PZL
turn-on time E to V
os
C
L
= 15 pF; R
L
= 1 k
;
V
CC
= 5 V
3
3
ns
t
PHZ
/t
PLZ
turn-off time E to V
os
C
L
= 15 pF; R
L
= 1 k
;
V
CC
= 5 V
5
5
ns
C
I
input capacitance
2
2
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 10 MHz;
notes 1 and 2
13
15
pF
C
S
switch capacitance
4
4
pF
2002 Jun 06
3
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT E
SWITCH
L
OFF
H
ON
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G66GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AL
74AHCT1G66GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CL
74AHC1G66GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A66
74AHCT1G66GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C66
PIN
SYMBOL
DESCRIPTION
1
Y
independent input/output
2
Z
independent output/input
3
GND
ground (0 V)
4
E
enable input (active HIGH)
5
V
CC
supply voltage
handbook, halfpage
1
2
3
5
4
MNA074
66
VCC
Z
E
GND
Y
Fig.1 Pin configuration.
handbook, halfpage
MNA627
Y
Z
E
Fig.2 Logic symbol.
2002 Jun 06
4
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
handbook, halfpage
MNA076
4 #
1
2
X1
1
1
Fig.3 IEC logic symbol.
handbook, halfpage
MNA628
VCC
E
Y
Z
Fig.4 Logic diagram.
2002 Jun 06
5
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
note 1.
Note
1. To avoid drawing V
CC
current out of pin Z, when switch current flows into pin Y, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin Z, no V
CC
current will flow out of pin Y.
In this case there is no limit for the voltage drop across the switch, but the voltage at pins Y and Z may not exceed
V
CC
or GND.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G66
74AHCT1G66
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
S
switch voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5.0
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V or V
I
> V
CC
+ 0.5 V
-
-
20
mA
I
SK
switch diode current
V
S
<
-
0.5 V or V
S
> V
CC
+ 0.5 V
-
20
mA
I
S
switch source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
, I
GND
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW