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Электронный компонент: 74AHC1G86GW

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DATA SHEET
Product specification
Supersedes data of 2002 Feb 18
2002 Jun 06
INTEGRATED CIRCUITS
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
2002 Jun 06
2
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74AHC1G86; 74AHCT1G86
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5-pin package
Output capability: standard
Specified from
-
40 to +125
C.
DESCRIPTION
The 74AHC1G/AHCT1G86 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G86 provides the 2-input
EXCLUSIVE-OR function.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PHL
/t
PLH
propagation delay A and B to Y
C
L
= 15 pF; V
CC
= 5 V
3.4
3.5
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
9
11
pF
2002 Jun 06
3
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74AHC1G86; 74AHCT1G86
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
INPUTS
OUTPUT
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
L
ORDERING INFORMATION
PINNING
TYPE NUMBER
PACKAGES
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G86GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AH
74AHCT1G86GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CH
74AHC1G86GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A86
74AHCT1G86GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C86
PIN
SYMBOL
DESCRIPTION
1
B
data input B
2
A
data input A
3
GND
ground (0 V)
4
Y
data output Y
5
V
CC
supply voltage
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA037
86
VCC
A
Y
GND
B
Fig.2 Logic symbol.
handbook, halfpage
MNA038
B
A
Y
2
1
4
2002 Jun 06
4
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74AHC1G86; 74AHCT1G86
Fig.3 IEC logic symbol.
handbook, halfpage
1
2
= 1
4
MNA039
Fig.4 Logic diagram.
handbook, halfpage
MNA040
Y
B
A
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f) input rise and fall
times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW
2002 Jun 06
5
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74AHC1G86; 74AHCT1G86
DC CHARACTERISTICS
Family 74AHC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
C)
UNIT
OTHER
V
CC
(V)
25
-
40 to +85
-
40 to +125
MIN.
TYP.
MAX.
MIN.
MAX.
MIN.
MAX.
V
IH
HIGH-level input
voltage
2.0
1.5
-
-
1.5
-
1.5
-
V
3.0
2.1
-
-
2.1
-
2.1
-
V
5.5
3.85
-
-
3.85
-
3.85
-
V
V
IL
LOW-level input
voltage
2.0
-
-
0.5
-
0.5
-
0.5
V
3.0
-
-
0.9
-
0.9
-
0.9
V
5.5
-
-
1.65
-
1.65
-
1.65
V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
2.0
1.9
2.0
-
1.9
-
1.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
3.0
2.9
3.0
-
2.9
-
2.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
50
A
4.5
4.4
4.5
-
4.4
-
4.4
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
4.0 mA
3.0
2.58
-
-
2.48
-
2.40
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
8.0 mA
4.5
3.94
-
-
3.8
-
3.70
-
V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 50
A
2.0
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 50
A
3.0
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 50
A
4.5
-
0
0.1
-
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
3.0
-
-
0.36
-
0.44
-
0.55
V
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
4.5
-
-
0.36
-
0.44
-
0.55
V
I
LI
input leakage
current
V
I
= V
CC
or GND
5.5
-
-
0.1
-
1.0
-
2.0
A
I
CC
quiescent supply
current
V
I
= V
CC
or GND;
I
O
= 0
5.5
-
-
1.0
-
10
-
40
A
C
I
input capacitance
-
1.5
10
-
10
-
10
pF