1.
General description
The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device.
The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates.
2.
Features
s
Symmetrical output impedance
s
High noise immunity
s
ESD protection:
x
HBM EIA/JESD22-A114-B exceeds 2000 V
x
MM EIA/JESD22-A115-A exceeds 200 V
x
CDM EIA/JESD22-C101 exceeds 1000 V.
s
Low power dissipation
s
Balanced propagation delays
s
Multiple package options
s
Specified from
-
40
C to +80
C and from
-
40
C to +125
C.
3.
Quick reference data
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
Rev. 02 -- 18 October 2004
Product data sheet
Table 1:
Quick reference data
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Type 74AHC2G08
t
PHL
, t
PLH
propagation delay
A and B to Y
C
L
= 15 pF; V
CC
= 5 V
-
3.2
5.9
ns
C
I
input capacitance
-
1.5
10
pF
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz
[1] [2]
-
17
-
pF
9397 750 13735
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 18 October 2004
2 of 17
Philips Semiconductors
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
[1]
C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
[2]
The condition is V
i
= GND to V
CC
.
4.
Ordering information
5.
Marking
Type 74AHCT2G08
t
PHL
, t
PLH
propagation delay
A and B to Y
C
L
= 15 pF; V
CC
= 5 V
-
3.6
6.2
ns
C
I
input capacitance
-
1.5
10
pF
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz
[1] [2]
-
19
-
pF
Table 1:
Quick reference data
...continued
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 2:
Ordering information
Type number
Package
Temperature range
Name
Description
Version
74AHC2G08DP
-
40
C to +125
C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHCT2G08DP
-
40
C to +125
C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
74AHC2G08DC
-
40
C to +125
C
VSSOP8
plastic very thin shrink small outline package;
8 leads; body width 2.3 mm
SOT765-1
74AHCT2G08DC
-
40
C to +125
C
VSSOP8
plastic very thin shrink small outline package;
8 leads; body width 2.3 mm
SOT765-1
74AHC2G08GM
-
40
C to +125
C
XSON8
plastic extremely thin small outline package;
no leads; 8 terminals; body 0.95
1.95
0.5 mm
SOT833-1
74AHCT2G08GM
-
40
C to +125
C
XSON8
plastic extremely thin small outline package;
no leads; 8 terminals; body 0.95
1.95
0.5 mm
SOT833-1
Table 3:
Marking
Type number
Marking code
74AHC2G08DP
A08
74AHCT2G08DP
C08
74AHC2G08DC
A08
74AHCT2G08DC
C08
74AHC2G08GM
A08
74AHCT2G08GM
C08
9397 750 13735
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 18 October 2004
3 of 17
Philips Semiconductors
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
6.
Functional diagram
7.
Pinning information
7.1 Pinning
Fig 1.
Logic symbol.
Fig 2.
IEC logic symbol.
Fig 3.
Logic diagram (one gate).
mna724
1A
1B
1Y
2
1
7
2A
2B
2Y
6
5
3
mna725
7
&
&
2
1
3
6
5
mna221
A
B
Y
Fig 4.
Pin configuration TSSOP8 and
VSSOP8.
Fig 5.
Pin configuration XSON8.
08
1A
V
CC
1B
1Y
2Y
2B
GND
2A
001aab564
1
2
3
4
6
5
8
7
08
2B
1Y
V
CC
2A
2Y
1B
1A
GND
001aab565
3
6
2
7
1
8
4
5
Transparent top view
9397 750 13735
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 18 October 2004
4 of 17
Philips Semiconductors
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
7.2 Pin description
8.
Functional description
8.1 Function table
[1]
H = HIGH voltage level;
L = LOW voltage level.
9.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Table 4:
Pin description
Symbol
Pin
Description
1A
1
data input
1B
2
data input
2Y
3
data output
GND
4
ground (0 V)
2A
5
data input
2B
6
data input
1Y
7
data output
V
CC
8
supply voltage
Table 5:
Function table
[1]
Input
Output
nA
nB
nY
L
L
L
L
H
L
H
L
L
H
H
H
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode
current
V
O
<
-
0.5 V or
V
O
> V
CC
+ 0.5 V
[1]
-
20
mA
I
O
output source or
sink current
V
O
>
-
0.5 V and
V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
, I
GND
V
CC
or GND current
-
75
mA
T
stg
storage
temperature
-
65
+150
C
P
tot
power dissipation
T
amb
=
-
40
C to +125
C
-
250
mW
9397 750 13735
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 18 October 2004
5 of 17
Philips Semiconductors
74AHC2G08; 74AHCT2G08
Dual 2-input AND gate
10. Recommended operating conditions
11. Static characteristics
Table 7:
Recommended operating operations
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Type 74AHC2G08
V
CC
supply voltage
2.0
5.0
5.5
V
V
I
input voltage
0
-
5.5
V
V
O
output voltage
0
-
V
CC
V
T
amb
ambient
temperature
see
Section 11
and
Section 12
-
40
+25
+125
C
t
r
, t
f
input rise and fall
times
V
CC
= 3.0 V to 3.6 V
-
-
100
ns/V
V
CC
= 4.5 V to 5.5 V
-
-
20
ns/V
Type 74AHCT2G08
V
CC
supply voltage
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
V
V
O
output voltage
0
-
V
CC
V
T
amb
ambient
temperature
see
Section 11
and
Section 12
-
40
+25
+125
C
t
r
, t
f
input rise and fall
times
V
CC
= 4.5 V to 5.5 V
-
-
20
ns/V
Table 8:
Static characteristics type 74AHC2G08
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
T
amb
= 25
C
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
1.5
-
-
V
V
CC
= 3.0 V
2.1
-
-
V
V
CC
= 5.5 V
3.85
-
-
V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
-
-
0.5
V
V
CC
= 3.0 V
-
-
0.9
V
V
CC
= 5.5 V
-
-
1.65
V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
-
50
A; V
CC
= 2.0 V
1.9
2.0
-
V
I
O
=
-
50
A; V
CC
= 3.0 V
2.9
3.0
-
V
I
O
=
-
50
A; V
CC
= 4.5 V
4.4
4.5
-
V
I
O
=
-
4.0 mA; V
CC
= 3.0 V
2.58
-
-
V
I
O
=
-
8.0 mA; V
CC
= 4.5 V
3.94
-
-
V
PDF 
ZIP