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Электронный компонент: 74AHCT1G04GW

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DATA SHEET
Product specification
Supersedes data of 2002 May 27
2003 Sep 04
INTEGRATED CIRCUITS
74AHC1G04; 74AHCT1G04
Inverter
2003 Sep 04
2
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5-pin package
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74AHC1G04/74AHCT1G04 are high-speed Si-gate
CMOS devices.
The 74AHC1G04/74AHCT1G04 provides the inverting
buffer.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
74AHC1G04
74AHCT1G04
t
PHL
/t
PLH
propagation delay input A to output Y C
L
= 15 pF; V
CC
= 5 V
3.1
3.4
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
15
16
pF
2003 Sep 04
3
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING AND PACKAGE INFORMATION
PINNING
INPUT
OUTPUT
A
Y
L
H
H
L
TYPE NUMBER
PACKAGES
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G04GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AC
74AHCT1G04GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CC
74AHC1G04GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A04
74AHCT1G04GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C04
PIN
SYMBOL
DESCRIPTION
1
n.c.
not connected
2
A
data input A
3
GND
ground (0 V)
4
Y
data output Y
5
V
CC
supply voltage
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA107
04
VCC
A
Y
GND
n.c.
Fig.2 Logic symbol.
handbook, halfpage
MNA108
A
Y
2
4
2003 Sep 04
4
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
Fig.3 IEC logic symbol.
handbook, halfpage
MNA109
4
1
2
Fig.4 Logic diagram.
handbook, halfpage
MNA110
A
Y
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G04
74AHCT1G04
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f)
input rise and fall times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
, I
GND
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation
T
amb
=
-
40 to +125
C
-
250
mW
2003 Sep 04
5
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
DC CHARACTERISTICS
Type 74AHC1G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
OTHER
V
CC
(V)
T
amb
= 25
C
V
IH
HIGH-level input
voltage
2.0
1.5
-
-
V
3.0
2.1
-
-
V
5.5
3.85
-
-
V
V
IL
LOW-level input
voltage
2.0
-
-
0.5
V
3.0
-
-
0.9
V
5.5
-
-
1.65
V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
-
50
A
2.0
1.9
2.0
-
V
I
O
=
-
50
A
3.0
2.9
3.0
-
V
I
O
=
-
50
A
4.5
4.4
4.5
-
V
I
O
=
-
4.0 mA
3.0
2.58
-
-
V
I
O
=
-
8.0 mA
4.5
3.94
-
-
V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 50
A
2.0
-
0
0.1
V
I
O
= 50
A
3.0
-
0
0.1
V
I
O
= 50
A
4.5
-
0
0.1
V
I
O
= 4.0 mA
3.0
-
-
0.36
V
I
O
= 8.0 mA
4.5
-
-
0.36
V
I
LI
input leakage
current
V
I
= V
CC
or GND
5.5
-
-
0.1
A
I
CC
quiescent supply
current
V
I
= V
CC
or GND; I
O
= 0
5.5
-
-
10
A
C
I
input capacitance
-
-
1.5
10
pF