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Электронный компонент: 74AHCT1G126GW

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DATA SHEET
Product specification
Supersedes data of 2002 Feb 15
2002 Jun 06
INTEGRATED CIRCUITS
74AHC1G126; 74AHCT1G126
Bus buffer/line driver; 3-state
2002 Jun 06
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74AHC1G126; 74AHCT1G126
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5-pin package
Output capability: standard
Specified from
-
40 to +125
C.
DESCRIPTION
The 74AHC1G/AHCT1G126 is a high-speed Si-gate
CMOS device.
The 74AHC1G/AHCT1G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output to assume a high-impedance
OFF-state.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PHL
/t
PLH
propagation delay A to Y
C
L
= 15 pF; V
CC
= 5 V
3.4
3.4
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz; notes 1 and 2
9
11
pF
2002 Jun 06
3
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74AHC1G126; 74AHCT1G126
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don't care;
Z = high-impedance OFF-state.
INPUTS
OUTPUT
OE
A
Y
H
L
L
H
H
H
L
X
Z
ORDERING INFORMATION
PINNING
TYPE NUMBER
PACKAGES
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74AHC1G126GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
AN
74AHCT1G126GW
-
40 to +125
C
5
SC-88A
plastic
SOT353
CN
74AHC1G126GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
A26
74AHCT1G126GV
-
40 to +125
C
5
SC-74A
plastic
SOT753
C26
PIN
SYMBOL
DESCRIPTION
1
OE
output enable input
2
A
data input A
3
GND
ground (0 V)
4
Y
data output Y
5
V
CC
supply voltage
2002 Jun 06
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74AHC1G126; 74AHCT1G126
Fig.1 Pin configuration.
handbook, halfpage
1
2
3
5
4
MNA124
126
VCC
A
Y
GND
OE
Fig.2 Logic symbol.
handbook, halfpage
MNA125
A
OE
Y
2
1
4
Fig.3 IEC logic symbol.
handbook, halfpage
MNA126
1
4
OE
2
Fig.4 Logic diagram.
handbook, halfpage
MNA127
OE
A
Y
2002 Jun 06
5
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
74AHC1G126; 74AHCT1G126
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f) input rise and fall
times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW