2002 Jun 06
2
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC1G14; 74AHCT1G14
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5 pin package
Output capability: standard
Specified from
-
40 to +125
C.
APPLICATIONS
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators.
DESCRIPTION
The 74AHC1G/AHCT1G14 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G14 provides the inverting buffer
function with Schmitt-trigger action. These devices are
capable of transforming slowly changing input signals into
sharply defined, jitter-free output signals.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PHL
/t
PLH
propagation delay A to Y
C
L
= 15 pF; V
CC
= 5 V
3.2
4.1
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 15 pF; f = 1 MHz;
notes 1 and 2
12
13
pF
INPUT
OUTPUT
A
Y
L
H
H
L
2002 Jun 06
4
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC1G14; 74AHCT1G14
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C
-
250
mW
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