2003 Jul 23
2
Philips Semiconductors
Product specification
Hex inverter
74HC04; 74HCT04
FEATURES
Complies with JEDEC standard no. 8-1A
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74HC/HCT04 are high-speed Si-gate CMOS devices
and are pin compatible with low power Schottky TTL
(LSTTL). They are specified in compliance with JEDEC
standard no. 7A. The 74HC/HCT04 provide six inverting
buffers.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
6.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. For 74HC04: the condition is V
I
= GND to V
CC
.
For 74HCT04: the condition is V
I
= GND to V
CC
-
1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC04
HCT04
t
PHL
/t
PLH
propagation delay nA to nY
C
L
= 15 pF; V
CC
= 5 V
7
8
ns
C
I
input capacitance
3.5
3.5
pF
C
PD
power dissipation capacitance per gate notes 1 and 2
21
24
pF
INPUT
OUTPUT
nA
nY
L
H
H
L
2003 Jul 23
4
Philips Semiconductors
Product specification
Hex inverter
74HC04; 74HCT04
handbook, halfpage
1
14
GND
(1)
1A
VCC
7
2
3
4
5
6
1Y
2A
2Y
3A
3Y
13
12
11
10
9
6A
6Y
5A
5Y
4A
8
GND
Top view
4Y
MBL760
Fig.2 Pin configuration DHVQFN14.
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
Fig.3 Logic symbol.
handbook, halfpage
MNA342
1A
1Y
1
2
2A
2Y
3
4
3A
3Y
5
6
4A
4Y
9
8
5A
5Y
11
10
6A
6Y
13
12
handbook, halfpage
1
1
2
MNA343
3
1
4
5
1
6
9
1
8
11
1
10
13
1
12
Fig.4 IEC logic symbol.
Fig.5 Logic diagram (one inverter).
handbook, halfpage
MNA341
A
Y
2003 Jul 23
5
Philips Semiconductors
Product specification
Hex inverter
74HC04; 74HCT04
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. For DIP14 packages: above 70
C derate linearly with 12 mW/K.
2. For SO14 packages: above 70
C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
C derate linearly with 4.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC04
74HCT04
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
V
I
input voltage
0
-
V
CC
0
-
V
CC
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
ambient temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 2.0 V
-
-
1000
-
-
-
ns
V
CC
= 4.5 V
-
6.0
500
-
6.0
500
ns
V
CC
= 6.0 V
-
-
400
-
-
-
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V or V
I
> V
CC
+ 0.5 V
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V
-
20
mA
I
O
output source or sink
current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
, I
GND
V
CC
or GND current
-
50
mA
T
stg
storage temperature
-
65
+150
C
P
tot
power dissipation
DIP14 package
T
amb
=
-
40 to +125
C; note 1
-
750
mW
other packages
T
amb
=
-
40 to +125
C; note 2
-
500
mW
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