2004 Sep 10
2
Philips Semiconductors
Product specification
Single Schmitt-trigger inverter
74LVC1G14
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V).
24 mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Unlimited rise and fall times
Input accepts voltages up to 5 V
Multiple package options
ESD protection:
HBM EIA/JESD22-A114-B exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
-
40
C to +85
C and
-
40
C to +125
C.
DESCRIPTION
The 74LVC1G14 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
The input can be driven from either 3.3 V or 5 V devices.
This feature allows the use of this device in a mixed
3.3 V and 5 V environment.
Schmitt-trigger action at the input makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G14 provides the inverting buffer function with
Schmitt-trigger action.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
C; t
r
= t
f
2.5 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
propagation delay A to Y
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 k
4.1
ns
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
2.8
ns
V
CC
= 3.3 V; C
L
= 50 pF; R
L
= 500
3.0
ns
V
CC
= 5.0 V; C
L
= 50 pF; R
L
= 500
2.2
ns
C
I
input capacitance
5
pF
C
PD
power dissipation capacitance per buffer
notes 1 and 2
15.4
pF
2004 Sep 10
3
Philips Semiconductors
Product specification
Single Schmitt-trigger inverter
74LVC1G14
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT
OUTPUT
A
Y
L
H
H
L
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74LVC1G14GW
-
40
C to +125
C
5
SC-88A
plastic
SOT353
VF
74LVC1G14GV
-
40
C to +125
C
5
SC-74A
plastic
SOT753
V14
74LVC1G14GM
-
40
C to +125
C
6
XSON6
plastic
SOT886
VF
PIN SC-88A; SC-74A
PIN XSON6
SYMBOL
DESCRIPTION
1
1
n.c.
not connected
2
2
A
data input A
3
3
GND
ground (0 V)
4
4
Y
data output Y
-
5
n.c.
not connected
5
6
V
CC
supply voltage
14
n.c.
V
CC
A
GND
Y
001aab655
1
2
3
5
4
Fig.1 Pin configuration SC-88A and SC-74A.
14
A
001aab656
n.c.
GND
n.c.
V
CC
Y
Transparent top view
2
3
1
5
4
6
Fig.2 Pin configuration XSON6.
2004 Sep 10
5
Philips Semiconductors
Product specification
Single Schmitt-trigger inverter
74LVC1G14
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
1.65
5.5
V
V
I
input voltage
0
5.5
V
V
O
output voltage
active mode
0
V
CC
V
Power-down mode; V
CC
= 0 V
0
5.5
V
T
amb
operating ambient temperature
-
40
+125
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6.5
V
I
IK
input diode current
V
I
< 0 V
-
-
50
mA
V
I
input voltage
note 1
-
0.5
+6.5
V
I
OK
output diode current
V
O
> V
CC
or V
O
< 0 V
-
50
mA
V
O
output voltage
active mode; notes 1 and 2
-
0.5
V
CC
+ 0.5
V
Power-down mode; notes 1 and 2
-
0.5
+6.5
V
I
O
output source or sink current
V
O
= 0 V to V
CC
-
50
mA
I
CC
, I
GND
V
CC
or GND current
-
100
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation
T
amb
=
-
40
C to +125
C
-
250
mW
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