1998 Aug 31
2
Philips Semiconductors
Product specification
Band-switching diode
BA591
FEATURES
Very small plastic SMD package
Low diode capacitance:
max. 1.05 pF
Low diode forward resistance:
max. 0.7
Small inductance.
APPLICATIONS
Low loss band-switching in VHF
television tuners
Surface mount band-switching
circuits.
DESCRIPTION
The BA591 is a planar, high
performance band-switching diode in
the very small SOD323 SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A1.
The marking band indicates the cathode.
handbook, halfpage
1
2
MAM406
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
35
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
= 90
C
-
500
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA
-
1
V
I
R
reverse current
V
R
= 20 V
-
20
nA
C
d
diode capacitance
f = 1 MHz; note 1; see Fig.2
V
R
= 1 V
0.8
1.05
pF
V
R
= 3 V
0.65
0.9
pF
r
D
diode forward resistance
f = 100 MHz; note 1; see Fig.3
I
F
= 3 mA
0.45
0.7
I
F
= 10 mA
0.36
0.5
1/g
p
reverse resistance
V
R
= 1 V; f = 100 MHz; note 1
100
-
k
L
S
series inductance
2
-
nH
1998 Aug 31
3
Philips Semiconductors
Product specification
Band-switching diode
BA591
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
120
K/W
GRAPHICAL DATA
Fig.2
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
VR (V)
Cd
(pF)
30
1.6
1.2
0.4
0
0.8
MGL477
Fig.3
Diode forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
= 25
C.
handbook, halfpage
10
1
10
-
1
MGL476
10
-
1
1
10
IF (mA)
rD
(
)
10
2
1998 Aug 31
4
Philips Semiconductors
Product specification
Band-switching diode
BA591
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
98-09-14
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
v
M
A
A
c
(1)
1998 Aug 31
5
Philips Semiconductors
Product specification
Band-switching diode
BA591
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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