Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- LIMITING VALUES
- PINNING
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Preliminary specification
2001 Nov 01
DISCRETE SEMICONDUCTORS
BAP27-01
Silicon PIN diode
M3D319
2001 Nov 01
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
FEATURES
High speed switching for RF signals
Low diode capacitance
Low diode forward resistance
Very low series inductance
For applications up to 4 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD723A ultra small plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
1
2
;
Top view
MAM405
Fig.1 Simplified outline (SOD723A) and symbol.
Marking code: M1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
50
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
s
= 90
C
-
315
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
65
+150
C
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA
0.95
1.1
V
I
R
reverse current
V
R
= 20 V
-
20
nA
C
d
diode capacitance
V
R
= 0; f = 1 MHz
0.45
-
pF
V
R
= 1 V; f = 1 MHz
0.35
0.45
pF
V
R
= 20 V; f = 1 MHz
0.27
0.32
pF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
1.6
2.5
I
F
= 1 mA; f = 100 MHz; note 1
1.2
2.0
I
F
= 5 mA; f = 100 MHz; note 1
0.7
1.2
I
F
= 10 mA; f = 100 MHz; note 1
0.6
0.95
|
s
21
|
2
isolation
V
R
= 0; f = 900 MHz
12.3
-
dB
V
R
= 0; f = 1800 MHz
7.7
-
dB
V
R
= 0; f = 2450 MHz
6.0
-
dB
|
s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
0.17
-
dB
I
F
= 0.5 mA; f = 1800 MHz
0.19
-
dB
I
F
= 0.5 mA; f = 2450 MHz
0.21
-
dB
|
s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
0.13
-
dB
I
F
= 1 mA; f = 1800 MHz
0.15
-
dB
I
F
= 1 mA; f = 2450 MHz
0.18
-
dB
|
s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
0.08
-
dB
I
F
= 10 mA; f = 1800 MHz
0.11
-
dB
I
F
= 10 mA; f = 2450 MHz
0.14
-
dB
|
s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
0.06
-
dB
I
F
= 100 mA; f = 1800 MHz
0.10
-
dB
I
F
= 100 mA; f = 2450 MHz
0.12
-
dB
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
0.17
-
s
L
S
series inductance
0.6
-
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
190
K/W
2001 Nov 01
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
GRAPHICAL DATA
0.1
1
10
0.1
1
10
100
I
F
(mA)
r
D
(
)
Fig.2
Forward resistance as a function of forward
current; typical values.
f = 100 MHz; T
j
= 25
C.
0
100
200
300
400
500
0
4
8
12
16
20
V
R
(V)
C
d
(pF)
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
-0.5
-0.4
-0.3
-0.2
-0.1
0
0
1
2
3
f (GHz)
|s
21
|
2
(dB)
(3)
(2)
(1)
(4)
Fig.4
Insertion loss (
|
s
21
|
2
) of the diode as a
function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and biased
via the analyzer Tee network. T
amb
= 25
C.
(1) I
F
= 0.5 mA.
(2) I
F
= 1 mA.
(3) I
F
= 10 mA.
(4) I
F
= 100 mA.
-40
-30
-20
-10
0
0
1
2
3
f (GHz)
|s
21
|
2
(dB)
Fig.5
Isolation (
|
s
21
|
2
) of the diode as a function of
frequency; typical values.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
2001 Nov 01
5
Philips Semiconductors
Preliminary specification
Silicon PIN diode
BAP27-01
PACKAGE OUTLINE
SOD723A
Fig.6
UNDE
R DEV
ELOP
MENT
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